Pixel readout chips in deep submicron CMOS for ALICE and LHCb tolerant to 10Mrad and beyond

Snoeys, W.; Burns, Michael J.; Campbell, M.; Cantatore, Eugenio; Cencelli, V. Orsolini; Dinapoli, R.; Heijne, E.H.M.; Jarron, P.; Lamanna, P.; Minervini, D.; Morel, Michel; O’Shea, V.; Quiquempoix, V.; Bello, David San Segundo; Koningsveld, B. van; Wyllie, K.

doi:10.1016/s0168-9002(01)00590-3

Cited by 27 publications

(7 citation statements)

References 18 publications

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“…B0 (B1) comprises 10 (20) ladders with a central radial position of 2.6 (5.1) cm. The silicon pixel technology is based on the ALICE1LHCb sensor-readout chip [42], which was developed at CERN. Each ladder is electrically divided into two independent half-ladders.…”

Section: The Vtx Detectormentioning

confidence: 99%

Single electron yields from semileptonic charm and bottom hadron decays inAu+Aucollisions atsNN=200GeV

Adare¹,

Aidala²,

Ajitanand³

et al. 2016

Phys. Rev. C

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The PHENIX Collaboration at the Relativistic Heavy Ion Collider has measured open heavy flavor production in minimum bias Au+Au collisions at √ s N N = 200 GeV via the yields of electrons from semileptonic decays of charm and bottom hadrons. Previous heavy flavor electron measurements indicated substantial modification in the momentum distribution of the parent heavy quarks due to the quark-gluon plasma created in these collisions. For the first time, using the PHENIX silicon vertex detector to measure precision displaced tracking, the relative contributions from charm and bottom hadrons to these electrons as a function of transverse momentum are measured in Au+Au collisions. We compare the fraction of electrons from bottom hadrons to previously published results extracted from electron-hadron correlations in p+p collisions at √ s N N = 200 GeV and find the fractions to be similar within the large uncertainties on both measurements for pT > 4 GeV/c. We use the bottom electron fractions in Au+Au and p+p along with the previously measured heavy flavor electron RAA to calculate the RAA for electrons from charm and bottom hadron decays separately. We find that electrons from bottom hadron decays are less suppressed than those from charm for the region 3 < pT < 4 GeV/c.

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Section: The Vtx Detectormentioning

confidence: 99%

Single electron yields from semileptonic charm and bottom hadron decays inAu+Aucollisions atsNN=200GeV

Adare¹,

Aidala²,

Ajitanand³

et al. 2016

Phys. Rev. C

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“…Its acceptance extends over a much larger span than that of the PHENIX's central arms, |η| < 0.35 and ∆φ = π/2 (the central arms measure electrons). The inner two silicon barrels consist of silicon pixel sensors whose technology follows that of the ALICE1LHCb sensor-readout hybrid developed at CERN for the ALICE and the LHCb experiments [6]. The outer two barrels comprise a silicon stripixel detector with a new "spiral" design, and a single-sided sensor with a 2-dimensional (X-U) read-out.…”

Section: Physics Motivationmentioning

confidence: 99%

Status and Performance of New Silicon Stripixel Detector for the PHENIX Experiment at RHIC: Beta Source, Cosmic-rays and Proton Beam at 120 GeV

et al. 2009

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We are constructing a Silicon Vertex Tracker detector (VTX) for the PHENIX experiment at RHIC. Our main motivation is to enable measurements of heavy flavor production (charm and beauty) in p + p, p + d and A + A collisions. Such data will illuminate the properties of the matter created in high-energy heavy-ion collisions. The measurements also will reveal the distribution of gluons in protons from p + p collisions. The VTX detector consists of four layers of barrel detectors and covers |η| < 1.2, and almost a 2π in azimuth. The inner two silicon barrels consist of silicon pixel sensors; their technology accords with that of the ALICE1LHCB 1 Corresponding author. JINST 4 P04011sensor-readout hybrid. The outer two barrels are silicon stripixel detectors with a new "spiral" design, and a single-sided sensor with 2-dimensional (X, U) readout. In this paper, we describe the silicon stripixel detector and discuss its performance, including its response to electrons from a beta source ( 90 Sr), muons from cosmic-rays, and a 120 GeV proton beam. The results from the proton beam demonstrate that the principle of two-dimensional position sensitivity based on charge sharing works; the signal-to-noise value is 10.4, the position resolution is 33.6 µm for Xstripixel (35.2 µm for U-stripixel), and the tracking efficiencies in the X-and U-stripixels are, over 98.9 ± 0.2%. The stripixel detector within the VTX project is in the pre-production phase.

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“…This leakage is caused by the formation of an inversion layer underneath the field oxide or at the edge of the active area. This leads to source-to-drain leakage and intertransistor leakage between neighboring n+ implants [5].…”

Section: Layout Techniques For Radiation Hardeningmentioning

confidence: 99%

Layout techniques for radiation hardening of standard CMOS active pixel sensors

Braga

Domingues

Rocha

et al. 2008

Analog Integr Circ Sig Process

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This article presents a radiation hardened active pixel sensor implemented in a standard 0.35 lm CMOS process. The integrated circuit is composed of a 64 9 64 pixel matrix with a 25 lm pixel pitch and has four different pixel architectures. There are also test structures to permit the characterization of the MOS transistors. The radiation hardening of the circuit is implemented with two layout techniques: enclosed geometry transistors and guard rings. It is shown that, with these techniques, the sensor is able to operate with total ionization doses that surpass 500 krad, which is more than double of the requirement for our application. Also, the techniques do not compromise the optical response of the pixels. To obtain an electrical model of the designed transistors, an EKV MOSFET Model was extracted.

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Pixel readout chips in deep submicron CMOS for ALICE and LHCb tolerant to 10Mrad and beyond

Cited by 27 publications

References 18 publications

Single electron yields from semileptonic charm and bottom hadron decays inAu+Aucollisions atsNN=200GeV

Single electron yields from semileptonic charm and bottom hadron decays inAu+Aucollisions atsNN=200GeV

Status and Performance of New Silicon Stripixel Detector for the PHENIX Experiment at RHIC: Beta Source, Cosmic-rays and Proton Beam at 120 GeV

Layout techniques for radiation hardening of standard CMOS active pixel sensors

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