Planar AlGaAs/GaAs HBT fabricated by MOCVD overgrowth with a grown base

Plumton, D.L.; Yang, J.Y.; Morris, Frank; Lambert, S.A.

doi:10.1109/16.108178

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Cited by 5 publications

(1 citation statement)

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“…For example, the temperature for Be postimplant annealing is as high as 800°C. 8,9 It is thus important to understand the process-induced degradation and thermal stability limit of the HBT structure subjected to RTP. However, there have been very few studies of the effects of RTP on AlGaAs/ GaAs HBT structures.…”

Section: Introductionmentioning

confidence: 99%

A comprehensive study of AlGaAs/GaAs beryllium- and carbon-doped base heterojunction bipolar transistor structures subjected to rapid thermal processing

Wang

Zheng

et al. 1999

Journal of Applied Physics

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Section: Introductionmentioning

confidence: 99%

A comprehensive study of AlGaAs/GaAs beryllium- and carbon-doped base heterojunction bipolar transistor structures subjected to rapid thermal processing

Wang

Zheng

et al. 1999

Journal of Applied Physics

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Interface states in regrown GaAs p-n junctions by selective molecular beam epitaxy

Ikossi‐Anastasiou

Johnstone

Stutz

et al. 1992

Applied Physics Letters

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We report the first evaluation of interface states present in GaAs p-n junctions regrown on a SiO2 masked substrate by selective molecular beam epitaxy. A constant-capacitance deep-level transient spectroscopy (CC-DLTS) method is extended to the regrown p-n junction case, and a technique to distinguish the DLTS signal emerging from bulk and interface states is employed. The extracted interface state density is in good agreement with predictions based on the unified disorder-induced gap state model.

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GaAs HBT's for high-speed digital integrated circuit applications

Chang

Yuan

1993

Proc. IEEE

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Planar AlGaAs/GaAs HBT fabricated by MOCVD overgrowth with a grown base

Cited by 5 publications

References 10 publications

A comprehensive study of AlGaAs/GaAs beryllium- and carbon-doped base heterojunction bipolar transistor structures subjected to rapid thermal processing

A comprehensive study of AlGaAs/GaAs beryllium- and carbon-doped base heterojunction bipolar transistor structures subjected to rapid thermal processing

Interface states in regrown GaAs p-n junctions by selective molecular beam epitaxy

GaAs HBT's for high-speed digital integrated circuit applications

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