Planar Hall effect with sixfold oscillations in a Dirac antiperovskite

Huang, D.; Nakamura, H.; Takagi, H.

doi:10.1103/physrevresearch.3.013268

Cited by 19 publications

(12 citation statements)

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“…Figure 4 shows the sheet resistance, R s , as a function of temperature for two films grown with Sr/SnO x BEP ratios of 12.5 (phase pure film) and 4.2 (Sn-rich), respectively. Both films show metallic behavior followed by an upturn in resistance at low temperatures, similar to Sr 3 SnO films reported in the literature, 13,21 and consistent with the negligible bandgap of Sr 3 SnO. Both films are p-type (see the supplementary material, Fig.…”

supporting

confidence: 86%

Molecular beam epitaxy of phase-pure antiperovskite Sr3SnO thin films

Combs

Stemmer

2021

Applied Physics Letters

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The antiperovskite oxide Sr 3 SnO has attracted substantial interest due to its topologically non-trivial band structure. Sr-deficient Sr 3-x SnO can become superconducting, making it a candidate intrinsic topological superconductor. Here, we show that epitaxial, phase-pure Sr 3-x SnO films can be synthesized by molecular beam epitaxy (MBE) using solid Sr and SnO 2 sources. We show that Sn-rich growth conditions result in a large amount of a Sn-rich impurity phase, which is challenging to detect in x-ray diffraction. Carrier densities and the amount of the impurity phase change systematically with the growth conditions, indicating that MBE provides excellent control over the films' stoichiometry. We discuss the electrical properties, including quantum interference phenomena, which support the topological nature of the films.

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supporting

confidence: 86%

Molecular beam epitaxy of phase-pure antiperovskite Sr3SnO thin films

Combs

Stemmer

2021

Applied Physics Letters

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“…On the other hand, the electronic density of states (DOS) and transport properties are computed using 45 × 45 × 45 and 45 × 45 × 1 kmeshes, respectively. We note here that earlier DFT-based studies for the bulk UC of A 3 SnO compounds report that a very dense kmesh is necessary for obtaining a good approximation of the electronic density of states [45,35]. However, despite the total energy convergence obtained with a shifted (a.k.a.…”

Section: Computational Detailsmentioning

confidence: 81%

“…In the recent past, most of the theoretical and experimental research interest in anti-perovskites A 3 SnO has mainly been motivated by trying to find an explanation behind the emergence of Dirac nodes in their band structure [35][36][37][38][39][40][41][42][43][44][45]. This has also led to the exploration of a wide array of structure-property relationships achievable in these materials, which give them flexible electronic, superconducting, and magnetic properties [46,47].…”

Section: Introductionmentioning

confidence: 99%

Structure inversion asymmetry enhanced electronic structure and electrical transport in 2D A3SnO (A = Ca, Sr, and Ba) anti-perovskite monolayers

et al. 2022

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Anti-perovskites A3SnO (A = Ca, Sr, and Ba) are an important class of materials due to the emergence of Dirac cones and tiny mass gaps in their band structures originating from an intricate interplay of crystal symmetry, spin-orbit coupling, and band overlap. This provides an exciting playground for modulating their electronic properties in the two-dimensional (2D) limit. Herein, we employ first-principles density functional theory (DFT) calculations by combining dispersion-corrected SCAN + rVV10 and mBJ functionals for a comprehensive side-by-side comparison of the structural, thermodynamic, dynamical, mechanical, electronic, and thermoelectric properties of bulk and monolayer (one unit cell thick) A3SnO anti-perovskites. Our results show that 2D monolayers derived from bulk A3SnO anti-perovskites are structurally and energetically stable. Moreover, Rashba-type splitting in the electronic structure of Ca3SnO and Sr3SnO monolayers is observed owing to strong spin-orbit coupling and inversion asymmetry. On the other hand, monolayer Ba3SnO exhibits Dirac cone at the high-symmetry Γ point due to the domination of band overlap. Based on the predicted electronic transport properties, it is shown that inversion asymmetry plays an essential character such that the monolayers Ca3SnO and Sr3SnO outperform thermoelectric performance of their bulk counterparts.

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“…While the hole carrier concentration could be tuned by varying the Sr/Pb and Sr/Sn ratios, the lowest concentrations we could attain were around 1×10 20 cm −3 for Sr 3 PbO and 1×10 19 cm −3 for Sr 3 SnO. For Sr 3 SnO, the corresponding Fermi energy is within the range of the Dirac dispersion, making the films ideal for magnetotransport measurements [22,24,29].…”

Section: Transportmentioning

confidence: 99%

Perspective: Molecular beam epitaxy of antiperovskite oxides

Nakamura,

Huang,

Takagi

2022

Preprint

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Antiperovskites, or inverse perovskites, have recently emerged as a material class with a plethora of promising electronic properties. This perspective describes the molecular beam epitaxy (MBE) growth of oxide antiperovskites Sr3PbO and Sr3SnO. We show that MBE offers great potential not only in growing antiperovskites with high structural quality, but also in providing a means to seamlessly connect with advanced characterization tools, including x-ray photoelectron spectroscopy (XPS), low-energy electron diffraction (LEED), reflection high-energy electron diffraction (RHEED), and scanning tunneling microscopy (STM), to facilitate the analyses of their intrinsic properties. The initial results point toward the feasibility of atomically controlled antiperovskite growth, which could open doors to study topological and correlated electronic states in an electronic environment quite distinct from what is available in conventional complex oxides.

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Planar Hall effect with sixfold oscillations in a Dirac antiperovskite

Cited by 19 publications

References 50 publications

Molecular beam epitaxy of phase-pure antiperovskite Sr3SnO thin films

Molecular beam epitaxy of phase-pure antiperovskite Sr3SnO thin films

Structure inversion asymmetry enhanced electronic structure and electrical transport in 2D A3SnO (A = Ca, Sr, and Ba) anti-perovskite monolayers

Perspective: Molecular beam epitaxy of antiperovskite oxides

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