Electron. Lett. (UK)

1989

DOI: 10.1049/el:19890196

|View full text |Cite

|

Sign up to set email alerts

|

Planar heterojunction bipolar transistor with an implanted base

¹

,

²

,

³

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

0

Mentioning

0

Contrasting

0

Year Published

1989

1989

1994

1994

Publication Types

Select...

Article4

Other1

Relationship

Self Cite0

Independent5

Authors

Journals

Cited by 5 publications

References 1 publication

Supporting

0

Mentioning

0

Contrasting

0

Order By: Relevance

Planarization of emitter-base structure of heterojunction bipolar transistors by doping selective base contact and nonalloyed emitter contact

¹

,

Kuo²,

et al. 1991

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

No abstract

Planarization of emitter-base structure of heterojunction bipolar transistors by doping selective base contact and nonalloyed emitter contact

¹

,

Kuo²,

et al. 1991

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

No abstract

Fully-planar AlGaAs/GaAs HBT's achieved by selective CBE regrowth

¹

,

²

,

³

et al. 1994

IEEE Electron Device Lett.

View full text Add to dashboard Cite

This paper describes a novel fully planar AlGaAsIGaAs heterojunction bipolar transistor (HBT) technology using selective chemical beam epitaxy (CBE). Planarization is achieved by a selective regrowth of the base and collector contact layers. This process allows the simultaneous metallization of the emitter, base and collector on top of the device. For the devices with an emitter-base junction area of 2 x 6 pmZ and a base-collector junction area of 14 x 6 pm2, a current gain cut off frequency of 50 GHz and a maximum oscillation frequency of 30 GHz are achieved. The common emitter current gain FE is 25 for a collector current density J c of 2 x io4 A/cm2.

Isolated emitter AlGaAs/GaAs HBT integrated with emitter-down HI/sup 2/L technology

¹

,

²

,

³

1989

IEEE Electron Device Lett.

View full text Add to dashboard Cite

No abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

Product

Browser Extension Assistant by scite Citation Statement Search Reference Check Visualizations Dashboards Explore Journals Explore Organizations Explore Funders Embedding Badge Embedding Citation Search Pricing

Resources

Blog Help & FAQ Accessibility Statement API Terms For Universities & Governments For Researchers For Publishers For Corporate, Pharma & Enterprise Author Marketing Become an Affiliate Get an organization trial or quote scite Data & Services

About

News & Press Careers Read our Paper Coverage

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Copyright © 2025 scite LLC. All rights reserved.

Made with 💙 for researchers

Part of the Research Solutions Family.