Planar InGaAs p-i-n Photodiodes With Transparent-Conducting-Based Antireflection and Double-Path Reflector

Lee, Yueh‐Lin; Huang, Chi-Chen; Ho, Chong-Long; Wu, Meng‐Chyi

doi:10.1109/led.2013.2281830

Cited by 10 publications

(6 citation statements)

References 10 publications

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“…Devices of 60 nm width exhibit dark currents in reverse bias as low as 1.7 nA at −2 V, for devices with 200 nm and 500 nm width dark currents of 15 nA and 36 nA at −2 V were measured, respectively (more details in Supplementary Note 5 ). These values compare well with dark currents measured in bonded, high material quality III–V photodetectors 32 as well as in conventional InGaAs photodetectors 33 and are lower than values achieved in grown InGaAs metal–semiconductor–metal NW photodetectors 20 . To investigate the spectral response of the photodetectors, devices are illuminated with a ps-pulsed supercontinuum laser (78 MHz repetition rate) and their I – V characteristics measured.…”

Section: Resultssupporting

confidence: 82%

High-speed III-V nanowire photodetector monolithically integrated on Si

et al. 2020

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Direct epitaxial growth of III-Vs on silicon for optical emitters and detectors is an elusive goal. Nanowires enable the local integration of high-quality III-V material, but advanced devices are hampered by their high-aspect ratio vertical geometry. Here, we demonstrate the in-plane monolithic integration of an InGaAs nanostructure p-i-n photodetector on Si. Using free space coupling, photodetectors demonstrate a spectral response from 1200-1700 nm. The 60 nm thin devices, with footprints as low as ~0.06 μm2, provide an ultra-low capacitance which is key for high-speed operation. We demonstrate high-speed optical data reception with a nanostructure photodetector at 32 Gb s−1, enabled by a 3 dB bandwidth exceeding ~25 GHz. When operated as light emitting diode, the p-i-n devices emit around 1600 nm, paving the way for future fully integrated optical links.

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Section: Resultssupporting

confidence: 82%

High-speed III-V nanowire photodetector monolithically integrated on Si

et al. 2020

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“…The values of R and EQE at 1600 nm were calculated to be 6.5 × 10 3 A W −1 and 5.04 × 10 5 % at a bias voltage of 0.5 V, respectively. They are higher than those of conventional infrared photodetectors constructed with InGaAs quantum dots and thin films [ 26 , 27 ].…”

Section: Resultsmentioning

confidence: 99%

Single-Crystalline InGaAs Nanowires for Room-Temperature High-Performance Near-Infrared Photodetectors

Fan

et al. 2015

Nano-Micro Lett.

134

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InGaAs is an important bandgap-variable ternary semiconductor which has wide applications in electronics and optoelectronics. In this work, single-crystal InGaAs nanowires were synthesized by a chemical vapor deposition method. Photoluminescence measurements indicate the InGaAs nanowires have strong light emission in near-infrared region. For the first time, photodetector based on as-grown InGaAs nanowires was also constructed. It shows good light response over a broad spectral range in infrared region with responsivity of 6.5 × 103 A W−1 and external quantum efficiency of 5.04 × 105 %. This photodetector may have potential applications in integrated optoelectronic devices and systems.Electronic supplementary materialThe online version of this article (doi:10.1007/s40820-015-0058-0) contains supplementary material, which is available to authorized users.

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“…After the diffu- sion process, the PDs were fabricated by standard photolithographic process reported previously. 17 I-V and C-V characteristics of 2.2-μm PDs with and without Zn driven-in PM-GZO films measured at room temperature in dark and illumination are shown in Fig. 6b.…”

Section: Tm-ald Gzomentioning

confidence: 99%

Characteristics of ALD-GZO Films with Driven-in Zn and Zn/Mg Sources for the Applications to Optoelectronic Devices

Huang¹,

Ho²,

Chen³

et al. 2014

ECS J. Solid State Sci. Technol.

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In this article, we report on the deposition and characterization of Ga-doped ZnO (GZO) films prepared by thermal-mode (TM) and plasma-mode (PM) atomic layer deposition (ALD) techniques. The GZO films were post-processed by annealing, Zn driven-in, and Mg/Zn driven-in. The driven-in process was performed by rapid thermal diffusion using ZnSiO x or MgSiO x /ZnSiO x spinning-on dopant (SOD) source. The Zn driven-in process on TM-ALD GZO films can effectively alleviate the Zn loss and suppress the increase of resistivity. Furthermore, the Mg/Zn drive-in process of TM-ALD GZO films can effectively enhance the ultraviolet (UV) transmittance. For application to near-infrared region (NIR), the Zn driven-in process on PM-ALD GZO films can increase the carrier concentration and reduce the resistivity. The 380-nm ultraviolet (UV) InGaN/GaN light-emitting diodes (LEDs) with using Mg/Zn driven-in TM-ALD GZO film as a transparent conducting layer can enhance the light extraction from 0.74 to 1.87 mW at 20 mA. Besides, the 2.2-μm InGaAs PIN photodiodes (PDs) with using Zn driven-in PM-ALD GZO film as a window layer can significantly lower the dark current at 1 V from 1.1 × 10 −5 (1.4 × 10 −3 A/cm 2 ) to 5.2 × 10 −6 A (6.6 × 10 −4 A/cm 2 ).ZnO-based transparent conductive oxides (TCOs) have been extensively investigated due to its low resistivity, high transparency in the visible region, and low cost of ZnO. Group III elements (Al, Ga, and In) can be introduced into ZnO as the extrinsic dopants to enhance the conductivity significantly. 1 Ga-doped ZnO (GZO) films have been expected as one of the most promising ZnO-based TCOs because of the similar ionic radii between Ga 3+ dopant and Zn 2+ ion (and thus a small lattice deformation of ZnO), and the similar covalent bond lengths between Ga-O (1.92 Å) and Zn-O (1.97 Å). 2,3 GZO films have played an important role as the transparent electrode or current spreading layer for light-emitting diodes (LEDs) to improve the uniform current injection. 4 It can be also used as the window layer for solar cells or photodiodes (PDs) to reduce the dark current. The GZO films are also highly anticipated for the application of micro-optoelectro-mechanical systems (MOEMS). 5 There is no carrier-current drift in MOEMS, so it is expected to supply the uniform voltage into device with GZO films by the even air gap modulation.Recently, atomic layer deposition (ALD) has gained much attention because of advantages of large area deposition, smooth surface morphology, excellent uniformity, high step coverage, and high aspect ratio. 6 In particular; thickness and concentration of film could be controlled precisely and easily. We previously reported the as-grown GZO films with a sandwich structure deposited by thermal-mode (TM) and plasma-mode (PM) ALD techniques. 7 The TM-ALD GZO films exhibit lower resitivity but poorer transmittance in the near-infrared region (NIR), opposite to PM-ALD GZO films. Typical TM-ALD GZO films have low resistivity, but the resistivity could be significantly increased after post...

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Planar InGaAs p-i-n Photodiodes With Transparent-Conducting-Based Antireflection and Double-Path Reflector

Cited by 10 publications

References 10 publications

High-speed III-V nanowire photodetector monolithically integrated on Si

High-speed III-V nanowire photodetector monolithically integrated on Si

Single-Crystalline InGaAs Nanowires for Room-Temperature High-Performance Near-Infrared Photodetectors

Characteristics of ALD-GZO Films with Driven-in Zn and Zn/Mg Sources for the Applications to Optoelectronic Devices

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