Planar InSb photodiodes fabricated by Be and Mg ion implantation

Hurwitz, C. E.; Donnelly, J.P.

doi:10.1016/0038-1101(75)90152-5

Cited by 56 publications

(14 citation statements)

References 5 publications

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“…Despite the fact that technology of InSb photodiodes is improved over the last 40 years [5], a number of problems remain valid [6,7]. For instance, it is known that IR photodiodes made of narrow-gap semiconductors, including InSb photodiode, suffer from excess leakage current at reverse bias, which can limit their performance.…”

Section: Introductionmentioning

confidence: 99%

“…For instance, it was explained by the surface leakage [2] or by tunneling with participation of extended defects (dislocations, precipitates) intersecting the depletion region [8]. In p-n junctions produced by ion implantation with Be or Mg, the interband tunneling current was shown to be dominant at high reverse bias voltages [5,9,10]. The breakdown voltage, U B , lies within the range 3 to 5 V. Higher values of the breakdown voltage U B = 14…30 V associated with the avalanche breakdown mechanism were observed in diffused photodiodes [11,12].…”

Section: Introductionmentioning

confidence: 99%

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Carrier transport mechanisms in reverse biased InSb p-n junctions

Sukach¹

2015

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. Carrier transport mechanisms have been investigated in linearly graded InSb p-n junctions prepared using thermal diffusion of Cd into single crystal substrates of ntype conductivity. The investigations were focused on the reverse current as a function of bias voltage and temperature. The obtained experimental data show that local inhomogeneities in the depletion region are responsible for the excess tunneling current observed in the reverse biased junctions. The inhomogeneities have been attributed to dislocations, precipitates or other extended defects. A phenomenological model is proposed to explain experimental data.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Carrier transport mechanisms in reverse biased InSb p-n junctions

Sukach¹

2015

Semicond. Phys. Quantum Electron. Optoelectron.

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“…Despite the fact that the development of high-quality InSb photodiodes is known for a long time [5], the problem of improving basic technical parameters and characteristics remains valid until now [7][8][9]. Especially important is to understand reasons of frequently observed excess dark currents in the photodiodes, which lead to worsening their performances.…”

Section: Introductionmentioning

confidence: 99%

“…Development of 2052×2052 InSb photodiode matrix has been reported in [4]. The photodiodes are usually produced by ion implantation of beryllium, magnesium [5] or thermal diffusion of zinc [2] and cadmium into n-InSb bulk substrates [1,3,4,7].…”

Section: Introductionmentioning

confidence: 99%

Carrier transport mechanisms in InSb diffusion p-n junctions

Sukach¹

2014

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. The linearly-graded p-n junctions were prepared by diffusion of cadmium into n-InSb(100) substrate with the electron concentration n  1.610 15 cm -3 at the temperature T = 77 K. Passivation and protection of mesa structures have been carried out using thin films of CdTe. Forward and reverse current-voltage characteristics were investigated within the temperature range 77…156 K. It has been found that the total dark current consists of generation-recombination and tunneling current components, which are dominant at high (T = 120…156 K) and low (T < 120 K) temperatures, respectively. Experimental results have been explained using the model of a nonhomogeneous p-n junction. It has been shown that in the linearly-graded p-n junction with the rather thick (~1 m) depletion region tunneling current flows through the states related to dislocations in the depletion region. The performed estimation of electrical parameters of diffusion InSb p-n junctions allows to predict behavior of InSb-based photodiodes at operation temperatures T > 77 K.

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“…Up to date, 2052×2052 focal matrix is developed on InSb bulk material [2]. The commonly used methods for manufacture InSb p-n junctions are implantation of light ions Be [3][4][5], Mg [3] and Zn [6], as well as diffusion of acceptor impurity Cd [7][8][9][10][11][12]. In diffusion photodiodes, rather high value of the differential resistance -area product R 0 A = 3.4·10 3 Ω·cm 2 was already reported in 1961 [7].…”

Section: Introductionmentioning

confidence: 99%