Planar intergrowth structures in the ZnO-In<sub>2</sub>O<sub>3</sub>system

McCoy, M. A.; Grimes, Robin W.; Lee, William

doi:10.1080/01418619708214222

Cited by 37 publications

(18 citation statements)

References 19 publications

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“…Inversion domain walls form in ZnO as a result of doping (Yan et al, 1998;McCoy et al, 1997;Cannard and Tilley, 1988;Li et al, 2000). The doped impurity chosen was indium.…”

Section: Inversion Domain Wallsmentioning

confidence: 99%

Structures of planar defects in ZnO nanobelts and nanowires

Ding

Wang

2009

Micron

104

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Quasi-one-dimensional (1D) nanostructures, such as nanowires, nanobelts and nanorods, are the forefront materials for nanotechnology. [1] To date, such nanostructures have been synthesized for a wide range of semiconductors and oxides, and they are potential building blocks for fabricating numerous nano-scale devices. 1D ZnO nanostructures, due to its unique semiconducting, piezoelectric, and bio-safe properties, have received wide attention. From structure point of view, a common characteristic of ZnO nanostructures is that they are mostly dislocation-free. However, planar and point defects do frequently exist in such nanostructures. The objective of this work is to present detailed electron microscopy study about the structures of planar defects, such as stacking faults, twins, inversion domain walls that existed in 1D ZnO nanostructures. These planar defects are important for understanding the growth mechanism and relevant physical and possibly chemical properties of 1D ZnO nanostructures.[1] Figure 1(a) shows a typical ZnO (01 1 3) twin structure [2]. Its SAED pattern is displayed in Fig. 1(b), which is composed of two sets of diffraction spots that have symmetrical geometrical distribution but possibly variable intensity. Figure 2(a) is a low magnification TEM image of another ZnO [01 1 0] growth nanobelt. There are two different basal-plane stacking faults exist in Fig. 2(a), the top one is the I 1 stacking fault. A HRTEM image of the bottom defect is shown in Fig. 2(b). In the defect area, the stacking sequence can be described as …ABABCACAC… It can be classified as an intrinsic type I 2 basal-plane stacking fault science it is equivalent to extracting two periodic layers and a 2/3[01 1 0] translation displacement has been measured across the defect. Besides basal-plane stacking faults, we also observed prismatic-plane stacking faults in wider ZnO nanobelts (~ 1µm). In order to determine the structural nature of the defect in the nanobelts, a series of dark-field images have been recorded as shown in Fig. 3. The defect contrast can be seen clearly in Fig. 3(a) and (b), which are the corresponding bright-field and dark-field images under two-beam condition with the g = (02 2 0). The diffraction condition is inserted in Fig. 3(b). By further tilting the nanobelt, we get two extinguishing conditions of the defects as shown in Fig. 3(c) and (d). The displacement crossing the stacking faults can be determined as 1/6<02 3 2 >.

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“…Inversion domain walls form in ZnO as a result of doping (Yan et al, 1998;McCoy et al, 1997;Cannard and Tilley, 1988;Li et al, 2000). The doped impurity chosen was indium.…”

Section: Inversion Domain Wallsmentioning

confidence: 99%

Structures of planar defects in ZnO nanobelts and nanowires

Ding

Wang

2009

Micron

104

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“…In the literature, there are some reports on indium doping in ZnO ceramics. [12][13][14][15] Part of the doped In ions are accumulated in the c planes of ZnO to form planar defects.…”

Section: Introductionmentioning

confidence: 99%

Doping and planar defects in the formation of single-crystal ZnO nanorings

2004

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We have recently reported the growth of freestanding, single-crystal, seamless nanorings of zinc oxide via a spontaneous self-coiling process during the growth of polar-nanobelts [X.Y. Kong et al., Science 303, 1348(2004]. The nanoring is made by coaxial and uniradius loop-by-loop winding of a fine ZnO nanobelt. An important fact is that each and every nanoring is made of a nanobelt that contains basal-plane planar defects, which are suggested to be important for leading the fastest growth of the nanobelt as well as lowering its elastic deformation energy. In this paper, high-resolution transmission electron microscopy is applied to investigate the nature of the planar defects in the nanobelts and in nanorings. The planar defects were initiated and formed by single-layer segregation of the doping element, such as indium, which was introduced in the growth process. The accumulation of impurity ions forms two vicinal Inu O octahedral layers parallel to the basal plane. They form "head-to-head" and "tail-to-tail" polar-inversion domain boundaries. For a nanobelt that self-coils into a nanoring, we found that the head-to-head and tail-to-tail polar-inversion domain boundaries are paired, thus, the polarity of the nanobelt is unchanged. Therefore, our data support the proposed model [X.Y. Kong et al., Science 303, 1348(2004] that the nanoring is initiated by circularly folding a nanobelt due to long-range electrostatic interaction between the surface polar charges on the two sides, and a loop-by-loop winding of the nanobelt forms a complete ring.

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“…Kimizuka et al 9 proposed that these compounds are isostructural with LuFeO 3 (ZnO) k , which has space group R3m for odd k values and space group P6 3 /mmc for even k values. McCoy et al 10 attempted to resolve this structural question by comparing the two models, using atomistic simulation in combination with high-resolution electron microscopy (HREM), and concluded that, although both models seemed to give a good match to their simulations, the structure that was proposed by Cannard Although a substantial amount of work has been performed to examine the crystal structure of these intergrowth phases, not much electrical conductivity and optical data for these materials exist. It has been previously shown that the conductivity increases as k decreases for [In] this paper, we report the solubility limits, electrical conductivity, and absorption edge of single-phase In 1−x Ga 1+x O 3 (ZnO) k for k ‫ס‬ 1, 2, and 3 in the ZnO-In 2 O 3 -Ga 2 O 3 system.…”

Section: Introductionmentioning

confidence: 99%