2018
DOI: 10.1109/led.2018.2837886
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Planar Nanostrip-Channel Al2O3/InAlN/GaN MISHEMTs on Si With Improved Linearity

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Cited by 28 publications
(11 citation statements)
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“…The product of GVS and the corresponding maximum value of g m can be used as a linear figure of merit. [36] The PDM-HEMT shows higher GVS gm  g m,peak values compared with those of the SMG and DMG HEMTs. In terms of the application to devices, the peak of IIP3 should occur at a low gate bias point and should be higher to improve linearity.…”
Section: Linearity Comparison Of Smg Dmg and Pdm Hemtsmentioning
confidence: 88%
“…The product of GVS and the corresponding maximum value of g m can be used as a linear figure of merit. [36] The PDM-HEMT shows higher GVS gm  g m,peak values compared with those of the SMG and DMG HEMTs. In terms of the application to devices, the peak of IIP3 should occur at a low gate bias point and should be higher to improve linearity.…”
Section: Linearity Comparison Of Smg Dmg and Pdm Hemtsmentioning
confidence: 88%
“…J. Vidkjaer et al [158] summarized some solution for linearity include geometrical, layout and epitaxial design. Weichuan Xing et al [159] designed 150*150 nm nanostrip gate hole structure by BCl 3 /Cl 2 and Al 2 O 3 insulator which have good linearity. Jeong-sun Moon et al [160] used AlGaN/GaN graded channel which have good PAE and linearity.…”
Section: Rf Gan Performance Si Substratementioning
confidence: 99%
“…However, the conventional planar HEMTs suffer from the intrinsically depletion-mode operation and buffer leakage current. To achieve normally-off devices with low off-state current, several groups have developed fin-gate HEMTs (Fin-HEMTs) [13][14][15][16][17][18]. The Fin-HEMTs show significant positive shift of threshold voltage by narrowing the fin width, and better leakage current suppress capability due to enhanced channel control from the gate sidewalls.…”
Section: Introductionmentioning
confidence: 99%