Planar selective regrowth of high resistivity semi-insulating InP(Fe) by LP-MOVPE for buried lasers using TBP

Sik, H.; Bellego, Y. Le; Win, P.; Bouchoule, S.; Patriarche, G.; Boulet, Pascal; Mestreallan, G Le; Ougazzaden, A.

doi:10.1016/s0022-0248(98)00706-4

Cited by 4 publications

(1 citation statement)

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“…Many studies on QCLs employing BH have been reported, but little effort has gone into exploring the regrowth phenomena. Additionally, although many authors have reported planar selective growth studies, [15][16][17][18][19][20] they are mostly done on mesas less than 3 lm for telecommunications lasers or require complex fabrication and growth processes. In reality, asymmetric growth rates on different crystallographic facets as well as other critical factors such as MOCVD growth parameters, mesa geometry, and nonuniform vapor-phase source concentration around the mesa make selective regrowth on such deep-etched QCL mesas unpredictable.…”

Section: Introductionmentioning

confidence: 99%

Analysis of InP Regrowth on Deep-Etched Mesas and Structural Characterization for Buried-Heterostructure Quantum Cascade Lasers

Cheng

Fan

Janssen

et al. 2011

Journal of Elec Materi

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We investigated the effect of deep-etched mesa sidewall profile and oxide overhang length on the regrowth structural characteristics for buriedheterostructure (BH) quantum cascade lasers (QCLs) grown by metalorganic chemical vapor deposition (MOCVD). The relationship between etched mesa sidewall geometry, oxide overhang length, oxide thickness, and growth uniformity was examined and is extensively discussed. In particular, anomalous growth in the vicinity of the oxide edge resulting from insufficient oxide overhang length was identified and studied. An ideal ratio of mesa height to oxide overhang length between 2.5 and 3.0 is proposed and experimentally justified to yield satisfactory planar regrowths without anomalous growth. Mesas in the ½011 direction with smoothly etched entrant profile yield a higher degree of growth uniformity than mesas in the [011] direction with the re-entrant profile.

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