A detailed study on the optical quality of atmospheric pressure metalorganic vapor phase epitaxy grown GaAs(1−x)Nx epilayers (on GaAs substrates) in which the N incorporation is accomplished using dimethylhydrazine precursor is reported. We show here that the poor optical quality of these as-grown layers can be significantly improved by carefully planned post-growth heat treatments. Optical data are presented to demonstrate unambiguously that such treatments affect in no way the physical properties of these metastable layers (no phase separation) and that the improvement of their optical quality is closely connected to the incorporation behavior of N in this growth method.

GaAsN layers with good structural quality and surface morphology have been successfully grown on a GaAs substrate using atmospheric pressure metal organic vapor phase epitaxy. A new combination of precursors namely, dimethylhydrazine for nitrogen and tertiarybutylarsine instead of conventional arsine for arsenic, greatly facilitated growths at temperatures as low as 500 °C. Layers with N content as high as 3% and corresponding to room temperature photoluminescence (PL) peak wavelength of 1.17 μm (1.064 eV) have been obtained.

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