Planar sulfur-doped silicon detectors for high-speed infrared thermography

Astrov, Yu. A.; Portsel, L. М.; Lodygin, А. N.; Shuman, V. B.; Abrosimov, Nikolai V.

doi:10.1016/j.infrared.2008.10.001

Cited by 6 publications

(1 citation statement)

References 17 publications

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“…We investigated the QZE in bulk-doped silicon with single substitutional donors Bi, Sb or P [35,36], the single interstitial donor Li, substitutional double donors S [37,38] and Se [33,39], the interstitial double donor Mg [40], and double donor complexes S 2 and Se 2 . The doping of each was in the range 1 × 10 14 −2 × 10 15 cm −3 , low enough that the distance between the donors is far larger than the orbit radius of any of the states of interest.…”

Section: Methodsmentioning

confidence: 99%

Radii of Rydberg states of isolated silicon donors

Litvinenko

et al. 2018

Phys. Rev. B

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We have performed high field magnetoabsorption spectroscopy on silicon doped with a variety of single and double donor species. The magnetic field provides access to an experimental magnetic length, and the quadratic Zeeman effect, in particular, may be used to extract the wave-function radius without reliance on previously determined effective mass parameters. We were, therefore, able to determine the limits of validity for the standard one-band anisotropic effective mass model. We also provide improved parameters and use them for an independent check on the accuracy of effective mass theory. Finally, we show that the optically accessible excited-state wave functions have the attractive property that interactions with neighbors are far more forgiving of position errors than (say) the ground state.

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Section: Methodsmentioning

confidence: 99%

Radii of Rydberg states of isolated silicon donors

Litvinenko

et al. 2018

Phys. Rev. B

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Mid-infrared absorptance of silicon hyperdoped with chalcogen via fs-laser irradiation

Sher¹,

Lin²,

Winkler³

et al. 2013

Journal of Applied Physics

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Silicon hyperdoped with heavy chalcogen atoms via femtosecond-laser irradiation exhibits strong broadband, sub-bandgap light absorption. Understanding the origin of this absorption could enable applications for hyperdoped-silicon based optoelectronic devices. In this work, we measure absorption to wavelengths up to 14 μm using Fourier transform infrared spectroscopy and study sulfur-, selenium-, and tellurium-hyperdoped Si before and after annealing. We find that absorption in the samples extends to wavelengths as far as 6 μm. After annealing, the absorption spectrum exhibits features that are consistent with free-carrier absorption. Although the surface morphology influences the shape of the absorption curves, the data permit us to place an upper bound on the position of the chalcogen dopant energy levels.

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