Planar waveguide laser in Er/Al-doped germanosilicate

Abstract

A singlemode DBR laser is demonstrated in an Er/Al-doped germanosilicate planar waveguide. 0.4mW of output power has been obtained at 1.553 µ m using internal Bragg reflectors produced by UV-induced index modulations.

Sol-gel silica-on-silicon buried-channel EDWAs

“…The dispersion of Er O may be improved by codoping with P O , Al O , and Ga O [38], [39]. However, high internal gain has so far only been achieved in a silica-on-silicon EDWA using low Er concentration and a long path in a phosphosilicate glass (PSG) [33], [34] or Al-doped germanosilicate glass [42], [43]. Furthermore, the weak absorption of Er at 980 nm requires the use of high-power pumps.…”

Layout optimization for erbium-doped waveguide amplifiers

“…This effect appears to be independent of the deposition method used, which might be flame hydrolysis [11], plasma-enhanced chemical vapor deposition [12]- [15], or the sol-gel process [16], [17]. Most silica-based EDWAs demonstrated to date have had a much lower gain per unit length, so that a folded or spiral layout was required to achieve sufficient overall gain (e.g., [11]).…”

AI2O3:Er3+ as a gain platform for integrated optics

“…Various devices have been reported in the literature, including numerous examples of integrated amplifiers [18, 19, 22, 24-26, 30-34, 40, 41, 44, 49-51], lossless power splitters with loss compensation achieved in amplified Er-doped waveguides [43,[58][59][60] and integrated continuous-wave [21,27,29,39,[60][61][62][63][64][65][66][67][68][69][70][71] and mode-locked [28,72] Er-doped lasers. In terms of amplifiers commercial fiber-pigtailed devices have been produced which show gain of 27 dB over a wavelength range of 30 nm [73], making such a device competitive with well-established EDFAs and semiconductor optical amplifier components [74].…”

“…However, these are not fully integrated solutions because the resonant cavity is not located entirely on the chip and, hence, the light emitted from the laser inevitably leaves the chip. Integrated resonators and lasers have been realized by various means, including a ring [65,66], distributed Bragg grating reflectors [66][67][68] (see Fig. 1.2b) and distributed feedback based on Bragg gratings [69,70].…”

“…In particular, Er-doped waveguide lasers are of interest for their emission at wavelengths around 1.55 µm in the third telecommunication window. Several methods have been applied to achieve resonant structures and lasing in Erdoped planar waveguides, including distributed-Bragg-reflector (DBR) [67,68], distributed-feedback (DFB) [69], and microdisk lasers [155]. Compared to DBR and DFB lasers a ring resonator laser offers a simple and straightforward solution, reducing the number and complexity of processing steps, while compared to a microdisk laser it allows much more straightforward coupling of pump and signal in an integrated manner.…”