Planar Zintl-phase high-temperature thermoelectric materials XCuSb (X = Ca, Sr, Ba) with low lattice thermal conductivity

Zheng, Sikang; Peng, Kunling; Xiao, Shijuan; Zhou, Zhan; Lu, Xu; Han, Guang; Zhang, Bin; Wang, Guoyu; Zhou, Xiaoyuan

doi:10.1007/s40145-022-0634-y

Cited by 19 publications

(32 citation statements)

References 53 publications

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“…22 Huang et al introduced point defects to BaAgSb by alloying Eu at the Ba site, and the maximum zT value of Ba 0.78 Eu 0.2 AgSb reached ∼0.73 at 773 K. 21 For the (Sr, Eu, Ba)CuSb, the isolated Sr, Eu, and Ba atoms act as rattling modes to strongly enhance vibrational anharmonicity. 22,23 It is worth noting that the lighter atom Sr favors stronger anharmonicity due to the weaker bond with the Cu−Sb ring, 26 and thus SrCuSb is anticipated to possess a lower thermal conductivity and a higher zT value. However, it is not easy to obtain the singlephase SrCuSb because of the high chemical activity of Sr. 23 In this paper, single-phase Sr 1+x CuSb was prepared by ball milling and spark plasma sintering.…”

Section: ■ Introductionmentioning

confidence: 99%

Realizing Enhanced Thermoelectric Performance in Zintl-Phase SrCuSb by Reducing the Thermal Conductivity

Wei

Chen²,

Yao

et al. 2023

ACS Appl. Energy Mater.

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Zintl-phase compounds have been extensively studied in recent years due to their phonon-glass and electron-crystal structure. As a ZrBeSi-type Zintl-phase compound, SrCuSb exhibits both high electrical transport properties and thermal conductivity because of the fully occupied anionic framework. In this work, the thermoelectric properties of SrCuSb were refined by Sr self-doping. The increased Sr content not only suppressed the secondary phase SrCu 2 Sb 2 but also lowered the carrier contribution to the thermal conductivity. A zT value of ∼0.36 was achieved for Sr 1.05 CuSb at 700 K. To further decrease the thermal conductivity, Ba was introduced to the alloy at the Sr site. Benefiting from the point defect scattering, the lattice thermal conductivity was reduced to ∼0.7 W K −1 m −1 at 760 K for the Sr 0.75 Ba 0.3 CuSb sample. Finally, a peak zT of ∼0.5 was obtained for Sr 0.75 Ba 0.3 CuSb at 773 K.

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Section: ■ Introductionmentioning

confidence: 99%

Realizing Enhanced Thermoelectric Performance in Zintl-Phase SrCuSb by Reducing the Thermal Conductivity

Wei

Chen²,

Yao

et al. 2023

ACS Appl. Energy Mater.

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“…Dependences of thermoelectric properties on carrier concentration have been discussed for various thermoelectric materials. , Figure a shows the dependence of electrical conductivity on the hole concentration in SnSe/glass films. Here, for comparison, the results of SnSe/STO and the SnSe single crystal are also shown.…”

Section: Discussionmentioning

confidence: 99%

Thermoelectric Property of SnSe Films on Glass Substrate: Influence of Columnar Grain Boundary on Carrier Scattering

Horide

Murakami

Ishimaru

et al. 2022

ACS Appl. Electron. Mater.

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Thermoelectric SnSe exhibits a very high figure of merit, and the a-axis orientation is needed because a high thermoelectric property is obtained along the bcplane. Here, in spite of the amorphous nature of glass, a-axis-oriented SnSe films were fabricated using pulsed laser deposition on a glass substrate, which is more practical than single-crystal oxide substrates. Transmission electron microscopy indicated that aaxis-oriented SnSe films with a columnar grain structure grew on amorphous SiO 2 . The electrical conductivity and the Seebeck coefficient at room temperature showed almost the same trend with respect to the hole concentration in both the SnSe/glass and SnSe/ single-crystal-substrate films. The electrical conductivity increased with increasing temperature more slowly in SnSe/glass films than in SnSe/single-crystal-substrate films. This indicates that the grain boundary contribution to carrier scattering is significant at high temperatures, while the grain boundary contribution is as strong as the orthorhombic domain boundary contribution at room temperature. In spite of the grain boundary effect, the power factor in SnSe/ glass was as high as that for single-crystal SnSe at high temperatures. Considering the grain boundary effect on electrical conductivity, the structure and process of SnSe films on amorphous substrates should be designed.

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“…Nevertheless, the room-temperature µ of Ba 1.01 AgSb sample can reach 344 cm 2 V −1 S −1 , which is superior to the values of other reported polycrystalline quasi-2D TE materials as summarized in Figure 2e. [12,14,[32][33][34][35][36][37][38][39][40][41][42]44,[53][54][55][56][57][58][59][60][61][62][63][64] It should be emphasized that we only compares the µ of bulk quasi-2D semiconductors, and the ultrahigh values of Bi 2 (Se, Te) 3 films [65,66] are not in the scope for comparison.…”

Section: Electrical Transport Propertiesmentioning

confidence: 99%

“…This is mainly caused by the lower carrier density (Figure S7, Supporting Information) and weaker defect scattering in BaAgSb, which is determined by the different doping level and preparation techniques. [50,51,63]…”

Section: Band Structures and Epc Analysismentioning

confidence: 99%

Symmetry‐Guaranteed High Carrier Mobility in Quasi‐2D Thermoelectric Semiconductors

et al. 2023

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Quasi‐2D semiconductors have garnered immense research interest for next‐generation electronics and thermoelectrics due to their unique structural, mechanical, and transport properties. However, most quasi‐2D semiconductors experimentally synthesized so far have relatively low carrier mobility, preventing the achievement of exceptional power output. To break through this obstacle, a route is proposed based on the crystal symmetry arguments to facilitate the charge transport of quasi‐2D semiconductors, in which the horizontal mirror symmetry is found to vanish the electron–phonon coupling strength mediated by phonons with purely out‐of‐plane vibrational vectors. This is demonstrated in ZrBeSi‐type quasi‐2D systems, where the representative sample Ba1.01AgSb shows a high room‐temperature hole mobility of 344 cm2 V−1 S−1, a record value among quasi‐2D polycrystalline thermoelectrics. Accompanied by intrinsically low thermal conductivity, an excellent p‐type zT of ≈1.3 is reached at 1012 K, which is the highest value in ZrBeSi‐type compounds. This work uncovers the relation between electron–phonon coupling and crystal symmetry in quasi‐2D systems, which broadens the horizon to develop high mobility semiconductors for electronic and energy conversion applications.

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Planar Zintl-phase high-temperature thermoelectric materials XCuSb (X = Ca, Sr, Ba) with low lattice thermal conductivity

Cited by 19 publications

References 53 publications

Realizing Enhanced Thermoelectric Performance in Zintl-Phase SrCuSb by Reducing the Thermal Conductivity

Realizing Enhanced Thermoelectric Performance in Zintl-Phase SrCuSb by Reducing the Thermal Conductivity

Thermoelectric Property of SnSe Films on Glass Substrate: Influence of Columnar Grain Boundary on Carrier Scattering

Symmetry‐Guaranteed High Carrier Mobility in Quasi‐2D Thermoelectric Semiconductors

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