Planarization of InP pyramids containing integrated InAs quantum dots and their optical properties

Abstract

Position-controlled InAs quantum dots ͑QDs͒ are integrated into planar InP structures by employing selective area growth of InP pyramids and regrowth by metalorganic vapor-phase epitaxy. A smooth surface morphology is obtained at elevated regrowth temperature due to suppression of three-dimensional growth on the pyramids. The height differences are less than 30 nm after nominal 700 nm InP regrowth at 640°C. Most important, the integrated QDs maintain good optical quality after regrowth for the realization of integrated nanophotonic devices and circuits operating at telecom wavelengths.

Semiconductor nanostructures engineering: Pyramidal quantum dots

“…16 During growth the top planar surface available can be reduced to a level which allows the growth of single SK dots on top of the structure. 17,18 Again the growth is in its essence a modified SK process, with strain relaxation as its main driving force. This method has produced important results, and is presently the strongest competitor to SK(H) and PQDs.…”