Threading dislocations in a thin silicon layer of SIMOX (Separation by IMplanted OXygen) samples were studied by white and monochromatic beam X‐ray diffraction topography in transmission and reflection geometry. The symmetrical transmission geometry appeared to be most suitable for the present study. The dislocation images were visible on topographs even though the Si layer thickness was very small compared to the pendellösung distance. The dislocation contrast could coherently be explained by an “interferometer like” and a “double crystal diffractometric like” formation mechanism. The first is controlled by local variations of the reciprocal lattice vector difference between the two parts of a bicrystal and the second by variations of the effective misorientation. The contrast analysis revealed that dislocations occurred in pairs with antiparallel Burgers vectors. The dislocation contrast dependence on the layer thickness, X‐ray wavelength, working point on the rocking curve, position on the moiré fringe pattern, and measurement geometry were also investigated.