Plasma-assisted chemical vapor deposition growth of SiC on Si(100): Morphology and electronic structure

Abstract

We have investigated the structure and the electronic properties of thin SiC films grown on Si(100) by plasma-assisted chemical vapor deposition from CH4 diluted in H-2 It was found that the growth proceeds through the nucleation of cubic and relaxed crystalline SIC islands preferentially oriented in the (100) direction. The average-island size increases with carbonization time up to a maximum size consisting of similar to 300 nm lateral width and similar to 100 nm height. We were able to determine the valence band discontinuity although the SIC overlayers were clusterlike End did not cover uniformly the Si substrate. The found value is 0.77+/-0.08eV. (C) 1998 American Vacuum Society

Superhydrophobic–Oleophobic Visible–Transparent Antireflective Nanostructured Anodic HfO2 Multifunctional Coatings for Potential Solar Panel Applications

“…The insets in Figure 5 show the F 1s and Si 2p experimental and curve-fitted narrow-scan spectra. Analysis of these spectra reinforces the conclusion about the presence of Si−O (103.7 eV), Si−C (102.2 eV), 38,39 C−F 2 (688.4 eV), and C−F 3 (685.5 eV) 40 in the coating composition. As after a weak Ar-ion sputtercleaning the intensity of the C−F 2 peak becomes in inverse proportion to that of the C−F 3 peak, it is assumed that the number of FAS-17 molecules with the outward-oriented low surface energy C−F functional groups adhered to the film surface is sufficient to make the film superhydrophobic.…”

Determination of the valence band offset of a heterojunction using low energy yield spectroscopy

“…The Si 2p spectrum (figure 1(b)) associated with the interface is made up of a chemically shifted component at 101 eV as well as the substrate component at 99.32 eV. The interface component is associated with the presence of a thin SiC layer on the top of the silicon substrate [10]. The C 1s spectrum (figure 1(b )) exhibits only one component.…”

“…The behaviour of the SiC component shows that charging effects can be ignored. Further results concerning these two stages, in which there is the spontaneous formation of a SiC layer, have already been discussed in a previous paper [10], and will be discussed in more detail in a forthcoming publication [11].…”

“…After the saturation of the SiC layer growth [10], the third growth stage begins with the formation of the µc-C/SiC interface and finishes with the development of a thick µc-C layer. At the end of this stage there is no further contribution to the XPS spectrum from the c-SiC layer emission.…”

Valence and conduction band offsets at amorphous hexagonal boron nitride interfaces with silicon network dielectrics

“…However, there have been several prior reports covering the VBO at interfaces between these materials and Si (001). [36][37][38][39][40][41][42][43][44][45] Combining these VBO values with a prior measurement of the VBO at the a-BN:H/Si interface, 11 one can use the rules of transitivity and commutativity to deduce the VBO at a-BN:H interfaces with SiO 2 , Si 3 N 4 , and SiC. 46 The transitivity and commutativity rules for VBOs, respectively, state that Having determined the valence band offsets, the CBOs at the a-BN:H interfaces can now be determined provided the band gaps of the two materials forming the interface are known.…”