2021
DOI: 10.1117/1.jmm.20.1.013801
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Plasma-assisted discharges and charging in EUV-induced plasma

Abstract: In the past years, EUV lithography scanner systems have entered High-Volume Manufacturing for state-of-the-art Integrated Circuits (IC), with critical dimensions down to 10 nm. This technology uses 13.5 nm EUV radiation, which is transmitted through a near-vacuum H2 background gas, imaging the pattern of a reticle onto a wafer. The energetic EUV photons excite the background gas into a low-density H2 plasma. The resulting plasma will locally change the near-vacuum into a conducting medium, and can charge float… Show more

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Cited by 10 publications
(9 citation statements)
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“…14,15 More recently, with the ever-shrinking length scales in nanomanufacturing, using the surface-charge-driven interaction between contaminating nanoparticles and photon-induced plasmas may become the only route to effective nanoparticle contamination control. 16 Although it has drawn the attention of the entire research community, thus far the fundamental interaction between plasma and particles on the nm size scale has been largely unexplored. This is mostly because of the nonexistence of experimental data needed to verify the few modeling efforts available in the literature.…”
mentioning
confidence: 99%
“…14,15 More recently, with the ever-shrinking length scales in nanomanufacturing, using the surface-charge-driven interaction between contaminating nanoparticles and photon-induced plasmas may become the only route to effective nanoparticle contamination control. 16 Although it has drawn the attention of the entire research community, thus far the fundamental interaction between plasma and particles on the nm size scale has been largely unexplored. This is mostly because of the nonexistence of experimental data needed to verify the few modeling efforts available in the literature.…”
mentioning
confidence: 99%
“…As outlined in section 3.4.2, photoelectric effect is significant in the vicinity of mirrors or reticle, and more electrons will actually be generated from the surface by photoemission than by gas ionization. This results in transient positive charging of the reticle frontside to ~30 V during the EUV pulse 65 , as shown in fig. 20.…”
Section: Reticle Mini-environmentmentioning
confidence: 99%
“…The reticle is floating, with independent conductive backside and frontside layers. 66 The surrounding surfaces, such as reticle masking blades, uniformity correction blades and other plasma-facing walls are conductive and grounded. As outlined in Sec.…”
Section: Reticle Mini-environmentmentioning
confidence: 99%
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“…Connected to that, electrically floating surfaces are known to accumulate negative charge, i.e. an excess of electrons, when exposed to, for instance, radiofrequency (RF) [8,9] or extreme ultravioletinduced [10] plasmas since the electrons possess higher mobility compared to ions. Charge accumulation on these surfaces is studied to account for various phenomena such as particle lofting [11].…”
Section: Introductionmentioning
confidence: 99%