Plasma-Assisted Halide Vapor Phase Epitaxy for Low Temperature Growth of III-Nitrides

Abstract

Developing growth techniques for the manufacture of wide band gap III-nitrides semiconductors is important for the further improvement of optoelectronic applications. A plasma-assisted halide phase vapor epitaxy (PA-HVPE) approach is demonstrated for the manufacture of undoped and In-doped GaN layers at ~600 °C. A dielectric barrier discharge (DBD) plasma source is utilized for the low-temperature activation of ammonia. The use of the plasma source at a growth temperature of ~600 °C increases the growth rate from ~1.2 to ~4–5 µm/h. Furthermore, the possibility for the growth of InGaN at ~600 °C has been studied. Precursors of GaCl and InCl/InCl3 are formed in situ in the reactor by flowing HCl gas over a melt of metallic Ga and In, respectively. The In concentration was low, in the order of a few percent, as the incorporation of In is reduced by plasma due to the activation of chlorine-containing species that etch the relatively poorly bonded In atoms. Nevertheless, the approach of using plasma for ammonia activation is a very promising approach to growing epitaxial III-nitrides at low temperatures.

Effect of Plasmonic Ag Nanoparticles on Emission Properties of Planar GaN Nanowires

“…There is a large variety of possible design schemes for fabricating hybrid metal/ semiconductor structures to allow the observation of phenomena yet to be explored or understood. GaN nanostructures are known for their high structural quality, but for InGaN, the growth process becomes more difficult [25]. The main reason for this problem is the degradation of crystalline quality due to an increase in lattice mismatch between InGaN and the underlying GaN.…”