Plasma assisted-MBE of GaN and AlN on graphene buffer layers

Borisenko, D. P.; Гусев, А. С.; Каргин, Н. И.; Komissarov, I.; Kovalchuk, N. G.; Лабунов, В. А.

doi:10.7567/1347-4065/ab124b

Cited by 8 publications

(8 citation statements)

References 27 publications

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“…GaN films are deposited on Si substrates mainly through chemical reactions of the Ga and N sources on the substrate surface by MOCVD [36,37] and MBE [38]. Since the initial fabrication of GaN-based HEMTs on Si using MOCVD and MBE [39,40], fabrication techniques have undergone rapid development, as indicated by µ N growing from approximately 900 cm 2 V −1 s −1 to more than 2000 cm 2 V −1 s −1 [41].…”

Section: Gan-based Hemt On Si Substratementioning

confidence: 99%

GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices

Wu¹,

Xing²,

Li³

et al. 2023

Semicond. Sci. Technol.

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Conventional silicon (Si)-based power devices face physical limitations—such as switching speed and energy efficiency—which can make it difficult to meet the increasing demand for high-power, low-loss, and fast-switching-frequency power devices in power electronic converter systems. Gallium nitride (GaN) is an excellent candidate for next-generation power devices, capable of improving the conversion efficiency of power systems owing to its wide band gap, high mobility, and high electric breakdown field. Apart from their cost effectiveness, GaN-based power high-electron-mobility transistors (HEMTs) on Si substrates exhibit excellent properties—such as low ON-resistance and fast switching—and are used primarily in power electronic applications in the fields of consumer electronics, new energy vehicles, and rail transit, amongst others. During the past decade, GaN-on-Si power HEMTs have made major breakthroughs in the development of GaN-based materials and device fabrication. However, the fabrication of GaN-based HEMTs on Si substrates faces various problems—for example, large lattice and thermal mismatches, as well as ‘melt-back etching’ at high temperatures between GaN and Si, and buffer/surface trapping induced leakage current and current collapse. These problems can lead to difficulties in both material growth and device fabrication. In this review, we focused on the current status and progress of GaN-on-Si power HEMTs in terms of both materials and devices. For the materials, we discuss the epitaxial growth of both a complete multilayer HEMT structure, and each functional layer of a HEMT structure on a Si substrate. For the devices, breakthroughs in critical fabrication technology and the related performances of GaN-based power HEMTs are discussed, and the latest development in GaN-based HEMTs are summarised. Based on recent progress, we speculate on the prospects for further development of GaN-based power HEMTs on Si. This review provides a comprehensive understanding of GaN-based HEMTs on Si, aiming to highlight its development in the fields of microelectronics and integrated circuit technology.

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Section: Gan-based Hemt On Si Substratementioning

confidence: 99%

GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices

Wu¹,

Xing²,

Li³

et al. 2023

Semicond. Sci. Technol.

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“…In some recent works, researchers regarded graphene as a suitable 2D buffer, which facilitated the high-quality epitaxy of III-nitrides layers on a silicon substrate via both the MOCVD [13][14][15][16] and MBE techniques [17][18][19]. Graphene has a hexagonal crystal lattice comparable to the (0001) plane of a GaN (AlN) crystal in the wurtzite phase.…”

Section: Introductionmentioning

confidence: 99%

Few-Layer Graphene as an Efficient Buffer for GaN/AlN Epitaxy on a SiO2/Si Substrate: A Joint Experimental and Theoret-ical Study

et al. 2022

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Single-layer (SLG)/few-layer (FLG) and multilayer graphene (MLG) (>15 layers) samples were obtained using the CVD method on high-textured Cu foil catalysts. In turn, plasma-assisted molecular beam epitaxy was applied to carry out the GaN graphene-assisted growth. A thin AlN layer was used at the initial stage to promote the nucleation process. The effect of graphene defectiveness and thickness on the quality of the GaN epilayers was studied. The bilayer graphene showed the lowest strain and provided optimal conditions for the growth of GaN/AlN. Theoretical studies based on the density functional theory have shown that the energy of interaction between graphene and AlN is almost the same as between graphite sheets (194 mJ/m2). However, the presence of vacancies and other defects as well as compression-induced ripples and nitrogen doping leads to a significant change in this energy.

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“…5,6) One of them is to use graphene as a crystalline buffer layer for GaN growth. [7][8][9][10][11][12][13][14][15][16][17][18][19] Even though the substrate is amorphous, high-quality GaN films can be grown on the graphene-covered substrates. 8,9,13,15,16,19) Besides, because graphene weakly interacts with the substrate and grown materials, GaN growth on graphene allows us to produce freestanding GaN films by mechanical exfoliation, 7,14) which could contribute to flexible photonics/electronics applications.…”

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confidence: 99%

“…Using in-situ XRD, the lattice parameters of GaN were precisely measured during growth, and the crystal orientation was determined after growth. Because it has been reported that the AlN buffer layers improve the GaN crystal quality on graphene, 15,16,19) the influence of AlN on GaN growth is also studied.…”

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In-situ X-ray diffraction analysis of GaN growth on graphene-covered amorphous substrates

Fuke

Sasaki

Takahasi

et al. 2020

Jpn. J. Appl. Phys.

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In-situ X-ray diffraction was used to investigate the initial stages of GaN growth on graphene-covered SiO2 substrates with or without AlN buffer layers by plasma-assisted molecular beam epitaxy. The in-plane lattice parameter of GaN remained almost constant during growth without AlN buffer layers, confirming weak interactions between GaN and graphene. On the substrate with AlN buffer layers, the GaN lattice parameter continuously changed from an AlN value to GaN value, indicating that the AlN islands act as seeds for GaN growth. Besides, GaN has preferential orientations epitaxial to graphene. Graphene can be used as a template of GaN growth on amorphous substrates.

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Plasma assisted-MBE of GaN and AlN on graphene buffer layers

Cited by 8 publications

References 27 publications

GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices

GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices

Few-Layer Graphene as an Efficient Buffer for GaN/AlN Epitaxy on a SiO2/Si Substrate: A Joint Experimental and Theoret-ical Study

In-situ X-ray diffraction analysis of GaN growth on graphene-covered amorphous substrates

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