Plasma-deposited CdS layers from (o-phen) bis (diethyldithiocarbamate) cadmium

Файнер, Н. И.; Rumyantsev, Yu. M.; Salman, E. G.; Косинова, М. Л.; Yurjev, G.S.; Sysoeva, N. P.; Maximovskii, E. A.; Сысоев, С. В.; Golubenko, A. N.

doi:10.1016/s0040-6090(95)08526-2

Cited by 5 publications

(2 citation statements)

References 13 publications

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“…Until this point in time, different strategies have been created to magnify nanoparticles of IV–VI semiconducting materials. To prepare IV–VI semiconductors, atomic layer epitaxy (ALE) [ 21 ], chemical bath deposition (CBD) [ 22 ], chemical vapor deposition (CVD) [ 23 ], and consecutive ionic layer adsorption and reaction (SILAR) [ 24 ] have been traditionally used. SILAR depends on the dip of the substrate into independently positioned cations and anions followed by washing after every response, it makes possible to give a heterogeneous response among the solid stage and the solvated ions in the solution.…”

Section: Introductionmentioning

confidence: 99%

MoO3, TiO2, and MoTiO5 based oxide semiconductor for photovoltaic applications

BAYRAKÇEKEN¹

2022

Turkish Journal of Chemistry

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Topographic essential synthesis of nanomaterials by adjusting easy preparatory factors is an effective way to improve a variety of nanostructured materials. The SILAR technique is used to evaluate the manufacturing samples of MoO 3 , TiO 2 , and MoTiO 5 nanostructures. These nanostructures of MoO 3 , TiO 2 , and MoTiO 5 are used as electrode materials in photovoltaic systems. The link between photoelectrochemical characteristics and MoO 3 , TiO 2 , and MoTiO 5 nanostructures is studied in depth. The photoelectrochemical characteristics of MoO 3 , TiO 2 , and MoTiO 5 nanostructures are discovered to be highly dependent. At a 5mV/s scan rate, the photocurrent of MoO 3 , TiO 2 , and MoTiO 5 electrodes surged fast when sunlight was turned on, reaching values of 1.03 mA cm −2 , 1.68 mA cm −2 , and 14.20 mA cm −2 , respectively. As soon as the solar illumination was turned off, the photocurrent value dropped to zero. Photocurrent transitions showed a quick, homogeneous photocurrent counterpart; this suggested that charge transfer in these ingredients is speedy and possibly related to the crystal buildings of MoO 3 , TiO 2, and MoTiO 5 . MoTiO 5 nano-belt and nano-disc thin films have typical uses in the photoelectrochemical sector because they have the best photoresponse and stability.

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Section: Introductionmentioning

confidence: 99%

MoO3, TiO2, and MoTiO5 based oxide semiconductor for photovoltaic applications

BAYRAKÇEKEN¹

2022

Turkish Journal of Chemistry

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“…Species such as thiolates, dithiocarbamates (dtc) [7][8][9][10][11], dithiophosphinates [12], xanthates [13][14][15], and other compounds [16] have been successfully used to obtain respective sulfides. So far, dithiocarbamates remain most widely used for this purpose with dtc being undoubtedly the one of the most explored S,S 0 -chelate systems.…”

Section: Introductionmentioning

confidence: 99%

Cadmium complex possessing simultaneously silanethiolato- and dithiocarbamato-ligands. A novel single-source precursor of cadmium sulfide

Mietlarek-Kropidłowska

Chojnacki

Strankowski

et al. 2014

J Therm Anal Calorim

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Thermal decomposition of suitable coordination compounds may be used as efficient route for fabrication of semiconducting layers. A new potential CdS precursor-a cadmium complex with all-sulfur Cd-coordination sphere [Cd{l-SSi(OBu t ) 3 }(S 2 CNC 4 H 8 )] 2 1-has been prepared, and its properties are investigated. The complex was obtained in the reaction between dimeric bis(tri-tert-butoxysilanethiolato)cadmium(II) [Cd{SSi(OBu t ) 3 } 2 ] 2 and ammonium N,Ntetrametylene-dithiocarbamate and characterized by spectral methods (IR, UV-Vis, MS, and NMR). X-ray structure analysis revealed the complex as molecular and dimeric in solid state with each of chelating dithiocarbamate ligands bonded to one Cd center and sulfur atoms from two tri-tertbutoxysilanethiolato ligands bridging metallic centers and thus completing the CdS 4 coordination sphere. Thin film of the precursor prepared on SiO 2 substrates via spin-coating technique was analyzed by AFM. Its decomposition was studied by thermal analysis methods (TG, DSC, and TG-FTIR). After melting at 227°C, [Cd{l-SSi(OBu t ) 3 } (S 2 CNC 4 H 8 )] 2 undergoes endothermic decomposition leading to CdS as the only solid product further identified by XRD, EDS, FIR as hexagonal CdS form. Its morphology is characteristic and may be described as ''micro-noodles''.

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Coordination Complexes as Precursors for Semiconductor Films and Nanoparticles

O’Brien

Pickett

2003

Comprehensive Coordination Chemistry II

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Plasma-deposited CdS layers from (o-phen) bis (diethyldithiocarbamate) cadmium

Cited by 5 publications

References 13 publications

MoO3, TiO2, and MoTiO5 based oxide semiconductor for photovoltaic applications

MoO3, TiO2, and MoTiO5 based oxide semiconductor for photovoltaic applications

Cadmium complex possessing simultaneously silanethiolato- and dithiocarbamato-ligands. A novel single-source precursor of cadmium sulfide

Coordination Complexes as Precursors for Semiconductor Films and Nanoparticles

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