Plasma depostion of BN, BCN:H and Me-BCN:H films using N-trimethylborazine (Me = Ti, Nb)

Weber, A.; Bringmann, U.; Klages, Claus‐Peter; Taube, K.; Döllein, G.; Meyer, H.‐Jürgen; Weidenbach, G.

doi:10.1051/jp3:1992184

Cited by 8 publications

(3 citation statements)

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“…Besides the B-N peak at 1372 cm -1 , another peak in the 1400-1500 cm -1 range is included in the broad band. The new peak has been traditionally associated with the C-C vibration by Weber et al 13 and with the B-O stretching vibration by Adams. 9 The former assignment may be disregarded, since, as we will see below, no carbon atoms have been detected by AES in the films.…”

Section: Influence Of Diborane Flowmentioning

confidence: 92%

Influence of Diborane Flow Rate on the Structure and Stability of CVD Boron Nitride Films

et al. 1996

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CVD boron nitride films have been deposited at 800 °C from diborane, ammonia, and hydrogen gas mixtures, using different B2H6 flow rates. The effect of the [B2H6]/[NH3] ratio in the gas mixture on the structure, composition, and the stability of the layers in humid atmospheres has been studied. For low [B2H6]/[NH3] ratios (r ≤ 0.25), the deposition rate is low and some crystalline ordering in the deposit was detected. However, when ratios >0.25 are used, stable amorphous boron nitride films are deposited at deposition rates four times higher (160 nm min-1). The partially turbostratic boron nitride films, deposited at r ≤ 0.25, are unstable in humid atmospheres (80% moisture). The evolution of the unstable films was followed by infrared spectroscopy. It is observed that the turbostratic component in the film is rapidly attacked by the water molecules present in the atmosphere, giving rise finally to boron enrichment in the films. After this stage, the attack rate becomes slower, due to the higher stability of the amorphous component in the films.

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Section: Influence Of Diborane Flowmentioning

confidence: 92%

Influence of Diborane Flow Rate on the Structure and Stability of CVD Boron Nitride Films

et al. 1996

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“…Mixtures of N,N',N''-trimethylborazine = (CH 3 ) 3 N 3 B 3 H 3 (TMB) (the B:C:N ratio 1:1:1) and argon have been used to deposit BCN:H films by means of ECR PECVD processes at 100-150°C (Weber et al, 1992(Weber et al, , 1993. Amorphous BCN layers were deposited on a polycarbonate substrate by RF PACVD at low temperature (95-120°C) using a mixture of TMB and H 2 , N 2 , or Ar (Wöhle et al, 1999).…”

Section: Trimethylborazinementioning

confidence: 99%

Compilation on Synthesis, Characterization and Properties of Silicon and Boron Carbonitride Films

Hoffmann¹,

Файнер²,

Косинова³

et al. 2011

Silicon Carbide - Materials, Processing and Applications in Electronic Devices

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“…However, much less attention has been focused on boron carbonitride film synthesis from carbon containing borazine derivatives. There are few works where Ntrimethylborazine (TMB) was used to produce BC x N y films (4)(5)(6). To optimize CVD conditions the thermodynamic analysis of the corresponding multinary systems is commonly made.…”

Section: Introductionmentioning

confidence: 99%

PECVD BC_xN_y Films from Mixtures of N-trimethylborazine with Hydrogen and Ammonia: Modelling, Synthesis and Characterization

et al. 2009

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Thin boron carbonitride films were grown by plasma enhanced chemical vapour deposition using mixture of N-trimethylborazine with ammonia or hydrogen. The thermodynamic analysis of the chemical vapour deposition in B-C-N-H system was carried out for temperatures from 300 to 1300 K, a total pressure from 1.33 to 1333 Pa and a wide range of values of H2:B3N3H3(CH3)3 and NH3:B3N3H3(CH3)3 ratios. The effect of the gas phase composition and substrate temperature on the chemical composition and optical properties of the deposits was studied by ellipsometry, scanning electron microscopy, IR-spectroscopy, and optical transmittance spectrophotometry. The low temperature boron carbonitride films were demonstrated to exhibit high optical transparency in the region of 400-2000 nm (transmittance up to 93 %).

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Plasma depostion of BN, BCN:H and Me-BCN:H films using N-trimethylborazine (Me = Ti, Nb)

Cited by 8 publications

References 0 publications

Influence of Diborane Flow Rate on the Structure and Stability of CVD Boron Nitride Films

Influence of Diborane Flow Rate on the Structure and Stability of CVD Boron Nitride Films

Compilation on Synthesis, Characterization and Properties of Silicon and Boron Carbonitride Films

PECVD BC_xN_y Films from Mixtures of N-trimethylborazine with Hydrogen and Ammonia: Modelling, Synthesis and Characterization

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Plasma depostion of BN, BCN:H and Me-BCN:H films using N-trimethylborazine (Me = Ti, Nb)

Cited by 8 publications

References 0 publications

Influence of Diborane Flow Rate on the Structure and Stability of CVD Boron Nitride Films

Influence of Diborane Flow Rate on the Structure and Stability of CVD Boron Nitride Films

Compilation on Synthesis, Characterization and Properties of Silicon and Boron Carbonitride Films

PECVD BCxNy Films from Mixtures of N-trimethylborazine with Hydrogen and Ammonia: Modelling, Synthesis and Characterization

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PECVD BC_xN_y Films from Mixtures of N-trimethylborazine with Hydrogen and Ammonia: Modelling, Synthesis and Characterization