2018
DOI: 10.1116/1.5062842
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Plasma enhanced atomic layer deposition of cobalt nitride with cobalt amidinate

Abstract: Cobalt nitride (Co3Nx) thin films were deposited via the technique of plasma enhanced atomic layer deposition (ALD) at low temperatures down to 100 °C, using bis(N,N′-di-iso-propylacetamidinato)cobalt(II) [Co(ipr2AMD)2] and NH3 plasma. Saturation curves demonstrate that the deposition processes follow the ideal self-limiting ALD fashion with a growth rate of 0.075 nm/cycle. The x in the nominal formula of Co3Nx is approximately 0.78, and the films are demonstrated polycrystalline with a hexagonal Co3N crystal … Show more

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Cited by 20 publications
(19 citation statements)
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“…Among these, the Co 16 N 2 phase is being Electronic supplementary material The online version of this article (https ://doi.org/10.1007/s4245 2-019-1808-2) contains supplementary material, which is available to authorized users. explored recently [24], Co 2 N and Co 3 N have been studied by several co-workers [25][26][27][28][29]. The N-rich CoN 2 phase was recently synthesized under high pressure high temperature (30 GPa, 1600 K) [30].…”
Section: Introductionmentioning
confidence: 99%
“…Among these, the Co 16 N 2 phase is being Electronic supplementary material The online version of this article (https ://doi.org/10.1007/s4245 2-019-1808-2) contains supplementary material, which is available to authorized users. explored recently [24], Co 2 N and Co 3 N have been studied by several co-workers [25][26][27][28][29]. The N-rich CoN 2 phase was recently synthesized under high pressure high temperature (30 GPa, 1600 K) [30].…”
Section: Introductionmentioning
confidence: 99%
“…5. The distinct features of these spectra are Co-Co (778.2 eV), Co-N (780.6 eV) in both Co 2p 3/2 and 2p 1/2 regions due to spin-orbit splitting 20,38,40,41 . The presence of dominant Co-N binding feature at 300 K again confirms Co 4 N phase formation and the oxidation state of Co for Co 4 N between +2 and +3 41 .…”
Section: Resultsmentioning
confidence: 99%
“…4 (d)). The main feature for 373 K annealed sample is Co-N bonding (398 eV) [37][38][39] and some N-O bonding (400 eV). For sample annealed at 573 K, the intensity of N 1s spectra is quite low as compared to others.…”
Section: Resultsmentioning
confidence: 99%
“…The monotonic decrease of the resistivity with increasing film thickness can be ascribed to the contributions of the electrons to scatter with grain boundaries, interfaces, and surfaces. Based on a scattering-induced model, which was given in our previous publications [34,35], the electrical resistivity as a function of the reciprocal of the films thickness is shown in Fig. 6(b).…”
Section: Resultsmentioning
confidence: 99%
“…The PEALD setup includes a deposition chamber and a lowpressure dielectric barrier discharge (DBD) apparatus. The details of the chamber have been given in our previous publications [34,35,36]. The deposition chamber consists of a 60-cm-long fused silica tube (id 50 mm) and a half-cylinder aluminum rod placed along the axis of the outer tube as the sample holder.…”
Section: Methodsmentioning
confidence: 99%