Plasma Enhanced Atomic Layer Deposition of Ru-Ta composite film as a Seed Layer for CVD Cu filling

Jeong, Daekyun; Inoue, Hiroaki; Shinriki, Hiroshi

doi:10.1109/iitc.2008.4546954

Cited by 4 publications

(4 citation statements)

References 1 publication

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“…The composition of the films was Ru 82 Ta 12 C 5 , Ru 77 Ta 15 C 7 , Ru 68 Ta 21 C 10 , Ru 52 Ta 32 C 15 , and Ta 65 C 35 when the sputtering power of Ru was 100, 75, 50, 25, and 0 W, respectively, at a fixed TaC sputtering power of 100 W. The results indicate that the composition of the studied films can be easily adjusted by controlling the deposition power of the targets, making the composition more reliable than that of traditional metal nitride barrier thin films deposited using reactive sputtering in nitrogen. 17 A small amount of oxygen contamination ͑1.2-1.5 atom %͒ still existed in the films. However, the amount of oxygen was so small that the composition of the film was considered to have no oxygen.…”

Section: Resultsmentioning

confidence: 99%

Ultrathin Ru–Ta–C Barriers for Cu Metallization

Fang

Lin

Chen

et al. 2011

J. Electrochem. Soc.

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The use of an ultrathin Ru-Ta-C film as a barrier for copper metallization in sub-32-nm ultra-large-scale integration ͑ULSI͒ has been evaluated. The films, fixed at 5 nm, were deposited by magnetron sputtering using Ru and TaC targets, and the film composition and structure were adjusted by tuning the respective deposition power. The structure of the Ru-Ta-C films gradually changed from Ru 4 Ta͑C͒ to nanocrystalline or nearly amorphous when optimizing TaC. For a sandwiched scheme of Cu/Ru 82 Ta 12 C 5 /Si or Cu/Ru 77 Ta 15 C 7 /Si, the failure temperature was at least 750°C. We also electroplated Cu directly onto a Ru-Ta-C film without Cu seeding. Because of their low resistivity ͑ Ͻ 100 ⍀ cm͒ and high thermal stability, Ru-Ta-C films are promising as a Cu barrier.

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Section: Resultsmentioning

confidence: 99%

Ultrathin Ru–Ta–C Barriers for Cu Metallization

Fang

Lin

Chen

et al. 2011

J. Electrochem. Soc.

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“…[5][6][7] Various methods have been reported to reduce the electrical resistance of the Cu interconnect by fabricating a thin barrier layer. [8][9][10][11][12][13] One such technique involves the preparation of thin barrier layers in Cu alloy films through annealing at elevated temperature. [12][13][14][15][16][17][18][19] These layers are formed after the segregation of the metallic solutes and their subsequent reaction with the underlying oxide dielectric layers.…”

Section: Introductionmentioning

confidence: 99%

Self-forming Mn-based diffusion barriers on low-ksubstrates

Park

Han

Kang

et al. 2014

Jpn. J. Appl. Phys.

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In this work, we report on a self-forming barrier process in Cu-Mn alloys. Cu-Mn alloy films were directly deposited onto low-k substrates by cosputtering and then subjected to an annealing treatment at various temperatures. X-ray diffraction patterns obtained for the Cu-Mn alloys showed Cu(111), Cu (200), and Cu(220) peaks, while transmission electron microscopy images revealed that a uniform Mn-based interlayer self-formed at the Cu-Mn/low-k interface after annealing. In order to evaluate the barrier properties of the Mn-based interlayer, thermal stability measurements were carried out with the low-k dielectrics. The Cu-Mn alloy showed improved thermal stability when compared to a pure Cu reference sample. The chemical composition of the self-formed interlayers on the low-k substrates was ultimately investigated by X-ray photoelectron spectroscopy analysis. Our results show that the composition of the self-formed interlayers depends on the oxide and carbon concentrations in the low-k material. Fig. 5. (Color online) Leakage currents vs applied electric field curves of Cu-Mn alloys deposited onto low-k samples and subjected to various thermal stress temperatures.

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“…1) In order to lower the line resistances, various methods have been reported to reduce the volume of barrier layer in Cu wires with fabricating an extremely thin barrier. [2][3][4][5][6][7][8][9] As one technology to form an extremely thin barrier layer, self-formed barrier (SFB) technique using Cu alloy seeds such as Cu-Mn and Cu-Ti systems has been reported. [5][6][7][8][9] In this technique, SFB are formed by following steps, (a) deposition of a Cu-X (X is Mn, Ti, Mg, etc.)…”

Section: Introductionmentioning

confidence: 99%

Performance of Cu Dual-Damascene Interconnects Using a Thin Ti-Based Self-Formed Barrier Layer for 28 nm Node and Beyond

Ohmori

Mori

Maekawa

et al. 2010

Jpn. J. Appl. Phys.

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With continuous shrinkage of advanced ultralarge scale integrations (ULSI), the impact of line resistance on the devices has become more and more important. In order to achieve low resistance and high reliability of Cu interconnects, we have applied a thin Ti-based self-formed barrier layer using Cu–Ti alloy seed to 45 nm node dual-damascene interconnects and evaluated its performance. The microstructure analysis by transmission electron microscope and energy dispersive X-ray fluorescence spectrometer has revealed that 2-nm-thick Ti-based barrier layer is self-formed at the interface between Cu and low-k dielectrics. The line resistance and via resistance decrease significantly, compared with those of conventional Ta/TaN barrier system. The stress migration performance is also drastically improved using self-formed barrier process. These results suggest Ti-based self-formed barrier process is one of the most promising candidates for advanced Cu interconnects.

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Plasma Enhanced Atomic Layer Deposition of Ru-Ta composite film as a Seed Layer for CVD Cu filling

Cited by 4 publications

References 1 publication

Ultrathin Ru–Ta–C Barriers for Cu Metallization

Ultrathin Ru–Ta–C Barriers for Cu Metallization

Self-forming Mn-based diffusion barriers on low-ksubstrates

Performance of Cu Dual-Damascene Interconnects Using a Thin Ti-Based Self-Formed Barrier Layer for 28 nm Node and Beyond

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