Plasma-Enhanced Atomic Layer Deposition of TaC[sub x]N[sub y] Films with tert-Butylimido Tris-diethylamido Tantalum and Methane/Hydrogen Gas

Cho, Gi-hee; Rhee, Shi‐Woo

doi:10.1149/1.3490413

Cited by 18 publications

(16 citation statements)

References 15 publications

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“…Therefore, the use of a plasma provides additional variables with which to tune the stoichiometry and composition of the films. These include the operating pressure, 205,225,245 plasma power, 52,62,70,151,152,167,183,213,214,233 plasma exposure time, 164,183,213,214,221,222,228,236,237,245 the admixing of additional gases into the plasma, 30,74,215,218 and the biasing voltage. 138,318 It is, for example, relatively straightforward to incorporate N atoms into oxide thin films by the addition of N 2 to a plasma generated in O 2 .…”

Section: Increased Choice Of Precursors and Materialsmentioning

confidence: 99%

Plasma-Assisted Atomic Layer Deposition: Basics, Opportunities, and Challenges

Profijt

Potts

Sanden

et al. 2011

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

742

537

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Plasma-assisted atomic layer deposition (ALD) is an energy-enhanced method for the synthesis of ultra-thin films with Å-level resolution in which a plasma is employed during one step of the cyclic deposition process. The use of plasma species as reactants allows for more freedom in processing conditions and for a wider range of material properties compared with the conventional thermally-driven ALD method. Due to the continuous miniaturization in the microelectronics industry and the increasing relevance of ultra-thin films in many other applications, the deposition method has rapidly gained popularity in recent years, as is apparent from the increased number of articles published on the topic and plasma-assisted ALD reactors installed. To address the main differences between plasma-assisted ALD and thermal ALD, some basic aspects related to processing plasmas are presented in this review article. The plasma species and their role in the surface chemistry are addressed and different equipment configurations, including radical-enhanced ALD, direct plasma ALD, and remote plasma ALD, are described. The benefits and challenges provided by the use of a plasma step are presented and it is shown that the use of a plasma leads to a wider choice in material properties, substrate temperature, choice of precursors, and processing conditions, but that the processing can also be compromised by reduced film conformality and plasma damage. Finally, several reported emerging applications of plasma-assisted ALD are reviewed. It is expected that the merits offered by plasma-assisted ALD will further increase the interest of equipment manufacturers for developing industrial-scale deposition configurations such that the method will find its use in several manufacturing applications.

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Section: Increased Choice Of Precursors and Materialsmentioning

confidence: 99%

Plasma-Assisted Atomic Layer Deposition: Basics, Opportunities, and Challenges

Profijt

Potts

Sanden

et al. 2011

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

742

537

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“…38,39 Small amounts of CH 4 in H 2 plasmas are furthermore known to influence the material properties by forming the TaC phase and free carbon in the case of plasma-assisted ALD of TaC x N y using a H 2 -CH 4 plasma. 40 The low resistivity observed at extended plasma exposures could be related to the presence of inclusions of the conductive TaC phase. 41 Towards the end of the plasma exposure probably no intact NMe 2 ligands are present and the surface is covered by CH x , NH x , and H species.…”

Section: B H 2 Plasma Exposurementioning

confidence: 99%

Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas

Knoops

Langereis

Sanden

et al. 2011

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers)Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. The reaction mechanisms of plasma-assisted atomic layer deposition (ALD) of TaN x using Ta(NMe 2 ) 5 were studied using quadrupole mass spectrometry (QMS). The fact that molecule dissociation and formation in the plasma have to be considered for such ALD processes was illustrated by the observation of 4% NH 3 in a H 2 -N 2 (1:1) plasma. Using QMS measurements the reaction products during growth of conductive TaN x using a H 2 plasma were determined. During the Ta(NMe 2 ) 5 exposure the reaction product HNMe 2 was detected. The amount of adsorbed Ta(NMe 2 ) 5 and the amount of HNMe 2 released were found to depend on the number of surface groups generated during the plasma step. At the beginning of the plasma exposure step the molecules HNMe 2 , CH 4 , HCN, and C 2 H 2 were measured. After an extended period of plasma exposure, the reaction products CH 4 and C 2 H 2 were still present in the plasma. This change in the composition of the reaction products can be explained by an interplay of aspects including the plasma-surface interaction, the ALD surface reactions, and the reactions of products within the plasma. The species formed in the plasma (e.g., CH x radicals) can re-deposit on the surface and influence to a large extent the TaN x material composition and properties.

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“…Cho et al got TiC x N y and TaC x N y film with workfunction of 4.66 eV and 4.37 eV respectively. 6,7 Jeon et al got TiC-TiN compound with workfunction of 4.6 eV. 8 Ragnarsson et al used a ALD TiAl process to get conformal low threshold voltage (Vt) bulk FinFET devices.…”

mentioning

confidence: 99%

Investigation of N Type Metal TiAlC by Thermal Atomic Layer Deposition Using TiCl₄and TEA as Precursors

Xiang¹,

Ding²,

Du³

et al. 2016

ECS J. Solid State Sci. Technol.

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N type metal gate TiAlC film was grown by thermal atomic layer deposition (ALD) technique using titanium tetrachloride (TiCl 4 ) and triethylaluminum (TEA) as precursors for the first time. The physical characteristics of the TiAlC film such as chemical composition, growth rate and crystal morphology were estimated by X-ray photoemission spectroscopy, X-ray reflectivity and X-ray diffraction, respectively. The electrical characteristics of the TiAlC films were investigated by using metal-oxide-semiconductor (MOS) capacitor structure. The effective workfunction can be tunable from 4.46 eV to 4.24 eV by adjusting the growth temperature and the film thickness. The effective workfunction of 4.24 eV is close to the Si conduction band edge. These results show that the TiAlC film is a promising gate metal candidate for the application in FinFET device of 22 nm technology node and beyond.In order to achieve high performance and high-density integration, high-k material and metal gate were introduced into complementary metal-oxide-semiconductor field-effect-transistors (CMOSFETs) when the feature size scales down to 45 nm. 1 As the feature size continues shrinking to 22 nm technology node, Fin field-effect-transistor (FinFET) structure with high aspect ratio was integrated into CMOS in order to suppress the short-channel effects. 2,3 One challenge for successful FinFET fabrication beyond 22 nm node is the film conformality and gap filling for structures with high aspect ratio. Atomic layer deposition (ALD) was widely regarded as the best method to overcome the above challenge due to its conformal filling capability with thickness down to the nanometer range. 4,5 However, using ALD to grow metal gate with low workfunction is difficult because of limited precursors. Cho et al. got TiC x N y and TaC x N y film with workfunction of 4.66 eV and 4.37 eV respectively. 6,7 Jeon et al. got TiC-TiN compound with workfunction of 4.6 eV. 8 Ragnarsson et al. used a ALD TiAl process to get conformal low threshold voltage (Vt) bulk FinFET devices. 9 Kim et al. and Triyoso et al. got ALD TiC and ALD TaC y films with tunable effective work function. 10,11 These films were grown by plasma enhanced ALD (PEALD) process. However, thermal ALD metal with low work function is rarely reported.In our previous work, we have successfully gotten thermal ALD TiAlC with low effective work function (EWF) of 4.49 eV by using titanium tetrachloride (TiCl 4 ) and trimethylaluminum (TMA). 12 It is found that doping Al into metal carbide can decrease the EWF of the metal gate. Triethylaluminum (TEA) is a metal organic precursor with special β-hydrogen, which can lead to H 2 elimination. The H 2 elimination will generate Al intermediate, which can decompose more easily at high temperature and further enhance Al doping into the final product. So in order to get lower EWF metal, in this paper, using new precursors TiCl 4 and TEA, we got N type metal gate TiAlC film by thermal ALD. The EWF of the newly grown TiAlC can be much lower. It can be tunable from 4.46 e...

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Plasma-Enhanced Atomic Layer Deposition of TaC[sub x]N[sub y] Films with tert-Butylimido Tris-diethylamido Tantalum and Methane/Hydrogen Gas

Cited by 18 publications

References 15 publications

Plasma-Assisted Atomic Layer Deposition: Basics, Opportunities, and Challenges

Plasma-Assisted Atomic Layer Deposition: Basics, Opportunities, and Challenges

Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas

Investigation of N Type Metal TiAlC by Thermal Atomic Layer Deposition Using TiCl₄and TEA as Precursors

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Plasma-Enhanced Atomic Layer Deposition of TaC[sub x]N[sub y] Films with tert-Butylimido Tris-diethylamido Tantalum and Methane/Hydrogen Gas

Cited by 18 publications

References 15 publications

Plasma-Assisted Atomic Layer Deposition: Basics, Opportunities, and Challenges

Plasma-Assisted Atomic Layer Deposition: Basics, Opportunities, and Challenges

Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas

Investigation of N Type Metal TiAlC by Thermal Atomic Layer Deposition Using TiCl4and TEA as Precursors

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Investigation of N Type Metal TiAlC by Thermal Atomic Layer Deposition Using TiCl₄and TEA as Precursors