In situ nitrogen doping of aluminum phosphate has been investigated in two dierent plasma enhanced atomic layer deposition (PE-ALD) processes. The rst method consisted of the combination of trimethyl phosphate plasma (TMP*) with a nitrogen plasma and trimethyl aluminum (TMA), i.e. TMP* -N 2 * -TMA. The second method replaces TMP* with a diethylphosphoramidate plasma (i.e. DEPA* -N 2 * -TMA), of which the amine group could further aid nitrogen doping and/or eliminate the need for a nitrogen plasma step.
1At a substrate temperature of 320 • C, the TMP*-based process showed saturated growth (0.8 nm/cycle) of a nitrogen doped (approximately 8 at.%) Al phosphate, while the process using DEPA* showed a similar amount of nitrogen but a signicantly higher growth rate (1.4 nm/cycle). In the latter case, nitrogen doping could also be achieved without the nitrogen plasma, but this leads to a high level of carbon contamination.Both lms were amorphous as-deposited, while X-ray diraction peaks related to AlPO 4 appeared after annealing in a He atmosphere. For high coating thickness (> 2 nm), a signicant increase in the Li-ion transmittance was found after nitrogen doping, although the coating has to be electrochemically activated.At lower thickness scales, such activation was not needed and nitrogen doping was found to double the eective transversal electronic conductivity. For the eective transversal ionic conductivity, no conclusive dierence was found. When a lithium nickel manganese cobalt oxide (NMC) powder is coated with one ALD cycle of N-doped Al phosphate, the rate capability and the energy eciency of the electrode improves.