Plasma‐Enhanced Atomic Layer Deposition of Al<sub>2</sub>O<sub>3</sub> on Graphene Using Monolayer hBN as Interfacial Layer

Canto, B.; Otto, Martin; Powell, Michael; Babenko, Vitaliy; O׳Mahony, Aileen; Knoops, Hcm Harm; Sundaram, Ramesh; Hofmann, Stephan

doi:10.1002/admt.202100489

Cited by 13 publications

(13 citation statements)

References 54 publications

(109 reference statements)

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“…To address this, dielectrics, such as Al 2 O 3 , [569] specific polymers, and h-BN, [570] have been employed as the packaging layers. Nevertheless, the poor interfacial quality between 2D films and Al 2 O 3 or polymer materials, [571,572] as well as the limited covering area of h-BN make this approach challenging for efficient wafer-scale packaging. New encapsulation materials and optimized deposition methods still need to be developed.…”

Section: Challenges and Perspectivesmentioning

confidence: 99%

Fabrication Technologies for the On‐Chip Integration of 2D Materials

Jia

Zhang

et al. 2022

Small Methods

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The carrier mobilities of all the listed materials are experimental results except for those of SnSe, MoO 3 , MoSSe, WSSe, and graphdiyne that are theoretical calculated values; b) The n, k values for all the listed materials are at 1550 nm except for BP at 800 nm and h-BN at 1200 nm; c) The NLO parameters of PdSe 2 , PtSe 2 , BP, h-BN, MoO 3 , and CsPbBr 3 are at 800 nm. Those of MoS 2 and Bi 2 Te 3 are at 1060 nm. Those of other materials are at 1550 nm. In addition to third-order optical nonlinearity, strong second-order optical nonlinearity has been observed for graphene, GO, MoS 2 , WSe 2 , PdSe 2 , and h-BN, with typical χ (2) values varying from 10 -12 -10 -7 m V -1 . [33,[116][117][118][119][120] ; d) The values of n 2 and β are dependent on the film thickness, here we only provide typical values obtained from experimental measurements.

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Section: Challenges and Perspectivesmentioning

confidence: 99%

Fabrication Technologies for the On‐Chip Integration of 2D Materials

Jia

Zhang

et al. 2022

Small Methods

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“…This is in good agreement with recent studies showing that an interlayer can successfully protect Gr from damage during ALD with O 2 plasma. 43 Nonetheless, in the case of Gr/Co/Ir(111) (Figure S7), we notice a slight increase of coercive field after the ALD deposition of the HZO, which is probably due to either a minor partial oxidation of Co or Co/HM intermixing (this may be favored by the elevated deposition temperature used for the ALD growth and subsequent annealing, to be further investigated). This effect is greatly reduced in Gr/Co/Pt(111) samples (Figure 7a and b).…”

Section: Magnetic Hysteresis Measurements On Hzo Onmentioning

confidence: 90%

“…Under these conditions, the damage to SLG should be minimized, 42 and O 2 plasma has been shown to produce high-quality ALD films on graphene. 43 Figure 1 shows the results of an atomic force microscopy (AFM, measured in tapping mode on a Bruker Dimension XR microscope) and grazing incidence X-ray diffraction (GIXRD, measured with a Cu Kα1 X-ray source on a Bruker D8 Discover XRD system) study on in situ nucleation methods on the Gr surface of Gr/Pt(111) stacks, with a Pt thickness of 30 nm. First, HZO deposition directly on the Gr surface was investigated, with no additional interlayer.…”

Section: In Situ Methods For Nucleation On the Graphene Surfacementioning

confidence: 99%

Toward Nonvolatile Spin–Orbit Devices: Deposition of Ferroelectric Hafnia on Monolayer Graphene/Co/HM Stacks

Lancaster

Arnay

Guerrero

et al. 2023

ACS Appl. Mater. Interfaces

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While technologically challenging, the integration of ferroelectric thin films with graphene spintronics potentially allows the realization of highly efficient, electrically tunable, nonvolatile memories through control of the interfacial spin−orbit driven interaction occurring at graphene/Co interfaces deposited on heavy metal supports. Here, the integration of ferroelectric Hf 0.5 Zr 0.5 O 2 on graphene/Co/heavy metal epitaxial stacks is investigated via the implementation of several nucleation methods in atomic layer deposition. By employing in situ Al 2 O 3 as a nucleation layer sandwiched between Hf 0.5 Zr 0.5 O 2 and graphene, the Hf 0.5 Zr 0.5 O 2 demonstrates a remanent polarization (2Pr) of 19.2 μC/cm 2 . Using an ex situ, naturally oxidized sputtered Ta layer for nucleation, we could control 2Pr via the interlayer thickness, reaching maximum values of 28 μC/cm 2 with low coercive fields. Magnetic hysteresis measurements taken before and after atomic layer deposition show strong perpendicular magnetic anisotropy, with minimal deviations in the magnetization reversal pathways due to the Hf 0.5 Zr 0.5 O 2 deposition process, thus pointing to a good preservation of the magnetic stack including single-layer graphene. X-ray diffraction measurements further confirm that the highquality interfaces demonstrated in the stack remain unperturbed by the ferroelectric deposition and anneal. The proposed graphenebased ferroelectric/magnetic structures offer the strong advantages of ferroelectricity and ferromagnetism at room temperature, enabling the development of novel magneto-electric and nonvolatile in-memory spin−orbit logic architectures with low power switching.

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“…Among currently available technological approaches that could be implemented in biowaste valorization, two groups that feature distinct physical and chemical processes stand out: thermochemical techniques [48,52] and plasma-based techniques. [53][54][55] While thermochemical techniques utilize high temperatures as the main process driver, the plasma technology utilizes electricity-driven processes. [56][57][58] Taking these two features into account, it appears natural to consider in detail the examples of the traditional thermal (thermochemical) and the plasma-based approaches.…”

Section: ✓ Conversion Of Biowastes and Low-value Natural Products Intomentioning

confidence: 99%

Functional Nanomaterials from Waste and Low‐Value Natural Products: A Technological Approach Level

Levchenko

Mandhakini

Prasad

et al. 2022

Adv Materials Technologies

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Low‐ and negative‐value (waste) products represent a valuable resource. Its use as a source for the fabrication of high value materials represents a lucrative pathway to increasing sustainability and decreasing the economic cost of various industries. Thermochemical methods for the valorization of biowaste and low‐value natural products are simple and cheap yet sufficiently efficient to deliver significant economic benefits. Plasma‐based methods represent another family of technologies for waste‐to‐value conversion. The nanostructure nucleation and growth in plasmas involve a complex set of physical and chemical processes that occur in bulk plasma and on surfaces. The choice between these two types of technology assumes a complex optimization that takes into account several factors including the cost of precursors; initial outlay and operating cost of equipment; the cost of labor; the cost of production engineering including the research and development efforts for designing the industrial technology, which is typically higher for the plasma‐based systems, and so on. In this article a technology level comparison of thermochemical and plasma‐based techniques for the valorization of raw and waste biomass, where the intent is to use the resulting products for environmental remediation, energy storage, optoelectronics, and biomedical applications, is presented.

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Plasma‐Enhanced Atomic Layer Deposition of Al₂O₃ on Graphene Using Monolayer hBN as Interfacial Layer

Abstract: graphene for the Al 2 O 3 ALD process. [30] Therefore, we conclude that the dielectric is not only pinhole-free, but also that the quality of the dielectric is not reduced due to the growth on top of a 2D material heterostructure.

Cited by 13 publications

References 54 publications

Fabrication Technologies for the On‐Chip Integration of 2D Materials

Fabrication Technologies for the On‐Chip Integration of 2D Materials

Toward Nonvolatile Spin–Orbit Devices: Deposition of Ferroelectric Hafnia on Monolayer Graphene/Co/HM Stacks

Functional Nanomaterials from Waste and Low‐Value Natural Products: A Technological Approach Level

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Plasma‐Enhanced Atomic Layer Deposition of Al2O3 on Graphene Using Monolayer hBN as Interfacial Layer

Abstract: graphene for the Al 2 O 3 ALD process. [30] Therefore, we conclude that the dielectric is not only pinhole-free, but also that the quality of the dielectric is not reduced due to the growth on top of a 2D material heterostructure.

Cited by 13 publications

References 54 publications

Fabrication Technologies for the On‐Chip Integration of 2D Materials

Fabrication Technologies for the On‐Chip Integration of 2D Materials

Toward Nonvolatile Spin–Orbit Devices: Deposition of Ferroelectric Hafnia on Monolayer Graphene/Co/HM Stacks

Functional Nanomaterials from Waste and Low‐Value Natural Products: A Technological Approach Level

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Plasma‐Enhanced Atomic Layer Deposition of Al₂O₃ on Graphene Using Monolayer hBN as Interfacial Layer