Plasma-enhanced chemical vapor deposition of silicon nitride from 1,1,3,3,5,5-hexamethylcyclotrisilazane and ammonia

Brooks, T. A.; Hess, Dennis W.

doi:10.1016/0040-6090(87)90211-2

Cited by 21 publications

(22 citation statements)

References 22 publications

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“…In the films prepared from TMDS, their concentration is minimal, and in those prepared from HMCTS, maximal. Note also that the content of the hydrogen-containing bonds, determined from the analysis of IR spectra, correlates with the concentration of hydrogen in the films obtained by plasmochemical decomposition of HMCTS and studied by the 1 Н NMR spectroscopy method [56].…”

Section: Determination Of Chemical Phase Compositions and Types Of mentioning

confidence: 99%

“…It is noteworthy here that the molecular structure of the starting organosilicon compounds affects the chemical and phase composition, as well as the microstructure of the deposited films of silicon carbonitride. The main part of compounds used for preparation of silicon carbonitride belonged to the class of silazanes: hexamethyldisilazane [11,39,[42][43][44][45][46][47][48][49][50][51][52][53][54], hexamethylcyclotrisilazane [55][56][57][58][59], polysilazanes, etc.…”

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confidence: 99%

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From organosilicon precursors to multifunctional silicon carbonitride

Файнер

2012

Russ J Gen Chem

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Films of silicon carbonitride of variable composition are prepared by the method of plasmochemical decomposition of tetramethyldisilazane, hexamethyldisilazane, and hexamethylcyclotrisilazane in the mixture with helium in the temperature range of 373-973 K. The chemical composition of the low temperature films (373-673 K) is described by the formula SiC x N y O z :H, whereas that of high temperature films, by the formula SiC x N y . The films of silicon carbonitride are found to be a nanocomposite material containing an amorphous part and nanocrystals, whose structure is close to the phase α-Si 3 N 4 . Films of the composition SiC x N y O z :H are promising as low-k interlayer dielectrics in ultra-large scale integrated circuits of new generation, as well as protecting antireflective coatings and light-emitting diodes.Nowadays more severe requirements are imposed on the quality of construction materials used in many fields of science and technology. New materials are necessary stable to high temperatures, mechanical wear, abrasion, corrosion and oxidation [1]. That is why various methods are intensively developed for the synthesis of refractory superhard coatings (hardness > 20 GPa), which have long lifetime, enhanced hardness, and are relatively cheap [2]. For example, coatings are made of materials alternative to the expensive diamond coatings. Binary solid compounds like SiC, TiC, TiN can provide an enhanced wear stability, but hardly can possess a wide variety of functional properties.Recent research has shown that coatings on the basis of ternary compounds exceed in their functional properties the coatings based on binary compounds [3]. One of promising ternary materials is silicon carbonitride. It possesses new properties as compared with crystalline binary compounds Si 3 N 4 and SiC. Films of silicon carbonitride possess an exclusive combination of physicochemical properties like high thermal conductivity, thermal stability (up to 1500°C), resistance to oxidation, high hardness, chemical inertness, that makes them ideal wear-and corrosionstable materials for applications in aggressive media, for high-temperature industrial and strategic applications [4][5][6][7][8][9][10]. It is assumed that a high thermal, chemical, and mechanical stability is achieved due to the absence of boundaries between the grains and of the oxides as secondary phases in these coatings. Besides, such properties as low density and good thermal shock resistance, are very important in the future for aerospace, automobile, and other fields of industry. It is known that stainless steel possessing high corrosive stability is rusted when stored for a long time in the open air because of acid rains. To prevent this process, the steel must be coated, for example, with a transparent solid film, like the film of silicon carbonitride [11]. In general, films of silicon carbonitride can be used in various applications, not only as barrier isolating layers, films for protection of flat panel displays, but also for general industrial application.Ad...

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Section: Determination Of Chemical Phase Compositions and Types Of mentioning

confidence: 99%

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confidence: 99%

From organosilicon precursors to multifunctional silicon carbonitride

Файнер

2012

Russ J Gen Chem

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“…These compounds are of particular interest, since the molecular structure of the initial organosilicon compounds affects the chemical and phase composition, as well as the microstructure of the deposited silicon carbonitride films. A large share of the organosilicon compounds used earlier to obtain silicon carbonitride belongs to the silazane class: hex amethyldisilazane (HMDS) [10,[22][23][24][25][26][27][28][29][30]46], hexame FAINER et al thylcyclotrisilazane [47][48][49][50][51], polysilazanes, etc. At present, there is a continuous search for and synthesis of other organosilicon compounds capable of provid ing new physicochemical and functional properties to their derivatives-silicon carbonitride layers.…”

Section: Introductionmentioning

confidence: 99%

Tris(diethylamino)silane—A new precursor compound for obtaining layers of silicon carbonitride

et al. 2012

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Abstract⎯Silicon carbonitride layers have been obtained by chemical deposition from the gas phase with thermal (LPCVD) and plasma (PECVD) activation of the gas mixture of helium with the new volatile silicon organic compound tris(diethylamino)silane (Et 2 N) 3 SiH (TDEAS) in the temperature region 373-1173 K. Thermodynamic simulation of the deposition processes from the gas mixture (TDEAS + He) in the temper ature interval 300-1300 K and pressure interval from 1 × 10 -2 to 10 mm Hg has revealed the possibility of varying the equilibrium composition of the condensed phase depending on the synthesis temperature and the composition of the initial gas mixture. Physicochemical and functional properties of obtained layers were studied by complex of modern methods. It has been established that the chemical composition of the silicon carbonitride layers obtained by the PECVD method, depending on the deposition conditions, approaches that of silicon oxynitride or nitride, and the composition of those obtained by the LPCVD method approaches that of silicon carbide. The presence of nanocrystals with a phase composition close to the stan dard α Si 3 N 4 phase and of carbon inclusions has been found in the layers.

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“…with low hydrogen and negligible organic carbon content, are very hardly achieved, unless huge amounts of additive gases and high substrate temperature are utilized. The addition of NH 3 to disilazanes containing plasmas has been widely tested in order to increase the N‐to‐Si ratio and to reduce the carbon content 8–10. The possibility of tuning the nitrogen content in the SiN x H y coating is a useful feature, for instance for optical applications 2,11.…”

Section: Introductionmentioning

confidence: 99%

PECVD of Low Carbon Content Silicon Nitride-Like Thin Films with Dimethylaminosilanes

Mundo¹,

Ricci²,

d’Agostino³

et al. 2007

Plasma Process. Polym.

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Three dimethylaminosilanes, characterized by a different number of NMe2 groups bonded to silicon, have been compared as precursors in silicon nitride‐like films plasma enhanced chemical vapour deposition (PECVD). The effect of input power on the chemical characteristics of the coatings has been studied by means of FT‐IR and XPS analyses, while the plasma phase composition has been investigated by means of optical emission spectroscopy (OES) with actinometric analysis for some relevant species such as CN and NH. The effect of NH3 addition to bis(dimethylamino)dimethylsilane‐Ar discharges has been considered in terms of film chemical composition and by performing a spectroscopic investigation of the plasma phase. Results indicate that dimethylaminosilanes are strongly fragmented, also under mild operating conditions, and that an important fragmentation step may involve NMe2 groups.

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Plasma-enhanced chemical vapor deposition of silicon nitride from 1,1,3,3,5,5-hexamethylcyclotrisilazane and ammonia

Cited by 21 publications

References 22 publications

From organosilicon precursors to multifunctional silicon carbonitride

From organosilicon precursors to multifunctional silicon carbonitride

Tris(diethylamino)silane—A new precursor compound for obtaining layers of silicon carbonitride

PECVD of Low Carbon Content Silicon Nitride-Like Thin Films with Dimethylaminosilanes

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