Plasma-enhanced chemical vapour deposition of amorphous silicon nitride for thin film diode active matrix liquid crystal displays

Optimization of plasma-enhanced chemical vapor deposition of hydrogenated amorphous silicon

“…Also in the case of PECVD of a-SiN x H y layers an improved layer-thickness uniformity was obtained for hydrogen-diluted growth. 14 The stress results for the deposition conditions of Fig. 1 are shown in Fig.…”

Hot-electron degradation in hydrogenated amorphous-silicon-nitride thin-film diodes

“…5 For the metal/a-SiN x H y /metal TFDs discussed here, preparation conditions were used that yielded a constant barrier height irrespective of the a-SiN x H y thickness. In this case, the J -V characteristics are determined by the applied electric field, as shown in Fig.…”

“…3,4 In recent articles, the optimization of material-deposition conditions and carrierinduced state-creation mechanisms was assessed for amorphous-silicon-nitride (a-SiN x H y ) TFDs. [5][6][7] However, few studies exist on the generation of hot electrons in amorphous semiconductors and their impact on device stability. Nieuwesteeg et al 6 identified a relationship between the production of hot electrons and the electrical drift under high electrical dc-field conditions at the anode of a-SiN x H y -based TFDs, used as a switching element in active-matrix liquid-crystal displays.…”

Dielectric breakdown II: Related projects at the University of twente

“…9. The device physics and the electronic properties of the TFDs have been described before [16,17]. breakdown characteristics of the TFD similar to that of a dielectric or to that of a semiconductor?…”