Dielectric breakdown II: Related projects at the University of twente

Klootwijk, J.H.; Verweij, J.F.; Rem, J.B.; Bijlsma, S.J.

doi:10.1016/0026-2692(95)00105-0

Cited by 5 publications

(2 citation statements)

References 17 publications

(14 reference statements)

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“…For the hydrogen-desorption-limited polysilicon deposition in the temperature range 550-650°C, the activation energy ranging between 1.6 and 1.7 eV is normally extracted from the Arrhenius plot. 30,48 Such a lower value compared to 1.95 eV can be caused, e.g., by insignificant reagent supply-related effects ͑i.e., diffusion and deple-tion͒ in the reactor.…”

Section: On Deposition Kineticsmentioning

confidence: 98%

Low-Temperature LPCVD of Polycrystalline Ge[sub x]Si[sub 1−x] Films with High Germanium Content

Kovalgin¹,

Holleman²

2006

J. Electrochem. Soc.

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A study of low-pressure chemical vapor deposition (LPCVD) of normalGexnormalSi1−x (x<0.65) films was carried out. The films were deposited on thermally oxidized silicon wafers at deposition temperatures of 430–480°C . Pure GenormalH4 and SinormalH4 (or normalSi2normalH6 ) gas sources were used. It has been found that the reactive sticking probability ratio between GenormalH4 and SinormalH4 varies between 11 and 3.5, depending on both the deposition temperature and film composition. An increase of germanium content from 40 to 60 atom % caused a sharp increase of deposition rate. The polycrystalline layers mainly contained (110)- and (111)-oriented grains. The (111)-oriented grains were overgrown by the (110)-oriented grains at 430°C after a film thickness of about 100nm . Reducing the total pressure below 10Pa led to a dominance of (111)-oriented grains. A relative GenormalH4 depletion in the downstream direction influenced both the composition and crystallinity of the layers, and the deposition rate. To minimize the depletion effect, normalSi2normalH6 has been used instead of SinormalH4 . No improvement has been obtained but the depletion from normalSi2normalH6 occurred instead of the depletion from GenormalH4 . A proper mixture of SinormalH4 , normalSi2normalH6 , and GenormalH4 can be suggested to compensate the depletion effects.

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Section: On Deposition Kineticsmentioning

confidence: 98%

Low-Temperature LPCVD of Polycrystalline Ge[sub x]Si[sub 1−x] Films with High Germanium Content

Kovalgin¹,

Holleman²

2006

J. Electrochem. Soc.

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“…Remarkably, for all cases, the values of E DB are much higher than those reported for silicon oxide, with a layer of same thickness, which fall in the range of 10–15 MV cm −1 or high‐κ dielectric layers which vary approximately as the reverse of the dielectric constant (e.g., E DB of 5.7 and 11.5 MV cm −1 were reported for a 59 nm HfO 2 layer and a 63 nm layer of Si 3 N 4 , respectively) . In addition, the electrical energy per unit area for dielectric breakdown can be calculated for each surface using E DB according to

\bar{T} = T + 1 / 2 ε ε_{0} E_{DB}^{2} h

, with T the average layer tension considered equal to zero, ε 0 the vacuum permittivity, and h the thickness of the lipid layer.…”

Section: Resultsmentioning

confidence: 86%

Ultrathin Supported Lipid Monolayer with Unprecedented Mechanical and Dielectric Properties

Kenaan

Zein

Kilinc

et al. 2018

Adv Funct Materials

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The development of ultrathin dielectrics for low power electronics operations, flexible and printed electronics, and field‐effect‐transistor‐based sensors is still a challenge. Here, monolayers of engineered lipids supported on silicon are reported presenting exceptional mechanical and dielectric properties. The lipid monolayers are stabilized using a simple procedure based on a two‐stage reticulation process in both their aliphatic chains and their head‐group. With a thickness lower than 3 nm, such layers are demonstrated to offer exceptional mechanical and dielectric stability with unprecedented low leakage current and dielectric strength. Surprisingly, the mechanical and dielectric pressures required to rupture/breakdown the monolayers are shown to be similar. These results suggest the presence of a strong correlation between mechanical and dielectric properties, as well as between the mechanisms of rupture and breakdown.

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Temperature dependant dielectric breakdown of sputter-deposited AlN thin films using a time-zero approach

2013

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Dielectric breakdown II: Related projects at the University of twente

Cited by 5 publications

References 17 publications

Low-Temperature LPCVD of Polycrystalline Ge[sub x]Si[sub 1−x] Films with High Germanium Content

Low-Temperature LPCVD of Polycrystalline Ge[sub x]Si[sub 1−x] Films with High Germanium Content

Ultrathin Supported Lipid Monolayer with Unprecedented Mechanical and Dielectric Properties

Temperature dependant dielectric breakdown of sputter-deposited AlN thin films using a time-zero approach

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