Temperature dependant dielectric breakdown of sputter-deposited AlN thin films using a time-zero approach

Designs of Silicon MIS Phase Modulator With a Deposited AlN Film as the Gate Dielectric

“…AlN is commonly used as a functional material for sensing or actuating purpose in micro-electromechanical system due to its large piezoelectric effect [10] and also used as a highdielectric-constant (high-κ) material in microelectronics due to its excellent dielectric properties such as κ ∼ 10 and E b ∼ 2-3 MV/cm [11]- [13]. Moreover, AlN deposited on SiO 2 offers a second-order nonlinearity (χ 2 ) of ∼4.7 pm/V and a linear EO coefficient (r 33 , r 13 ) of ∼1 pm/V, thus enabling to realize active functionalities such as second harmonic generation [14] and EO modulation [9].…”

“…Since the voltage applied between the Si and poly-Si layers is mostly dropped across the AlN layer, the Pockels effect induced modulation is very effective. Moreover, since AlN deposition has been developed as a mature technology and the deposited AlN film is thermally and chemically stable [11]- [13], the proposed modulator is CMOS-compatible and can be fabricated as the conventional Si MOS modulators.…”

Transparent Memory For Harsh Electronics

“…To provide long-term device reliability of RRAM and TRRAM devices, it would be more efficient to use materials that are already stable in high radiation conditions. To this end, we chose to study aluminum nitride (AlN) due to its direct bandgap (6.2 eV) 19 , high thermal conductivity (134 W/cm K) and thermal stability 20 , high breakdown field (0.95 MV/cm) 21 , and superior radiation hardness 22 23 24 , making it an ideal material for harsh electronics. Previously, researchers demonstrated an AlN-based photodetector that was stable at high temperature and in radiative environments, verifying the potential of these AlN-based devices in extreme conditions 6 .…”