2000
DOI: 10.1002/(sici)1521-3862(200002)6:1<13::aid-cvde13>3.0.co;2-2
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Plasma-Enhanced CVD of Fluorocarbon Thin Films via CF3H/H2 Chemistries

Abstract: Fluorocarbon thin films could possibly replace silicon dioxide as interlayer dielectrics in ULSI devices to reduce RC‐delay, cross‐talk, and power consumption. Fluoroform (CF3H) is a versatile gas for the preparation of such films and this work explores their deposition with the gas and varying volume fractions of hydrogen. The introduction of hydrogen leads to increased crosslinking, an enhanced value of the refractive index, a decrease in the advancing contact angle, and more scratch‐resistant films.

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Cited by 5 publications
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“…A trifluoromethane (CHF 3 ) plasma was used with the following parameters: CHF 3 flow rate = 50 sccm, CHF 3 pressure = 150 mTorr, Power = 180 W. The DC bias was recorded to be − 279 V. The thickness of the resulting fluoropolymer layer was measured to be 95 ± 2.2 nm, using a commercial precision surface profiler DektakXT (Bruker, USA), i.e. a deposition rate of ~ 25.3 ± 0.6 nm min -1 under these conditions—comparable with previous work 31 , 42 , 51 , 90 , 91 .…”
Section: Methodssupporting
confidence: 73%
“…A trifluoromethane (CHF 3 ) plasma was used with the following parameters: CHF 3 flow rate = 50 sccm, CHF 3 pressure = 150 mTorr, Power = 180 W. The DC bias was recorded to be − 279 V. The thickness of the resulting fluoropolymer layer was measured to be 95 ± 2.2 nm, using a commercial precision surface profiler DektakXT (Bruker, USA), i.e. a deposition rate of ~ 25.3 ± 0.6 nm min -1 under these conditions—comparable with previous work 31 , 42 , 51 , 90 , 91 .…”
Section: Methodssupporting
confidence: 73%