Plasma-enhanced metal organic chemical vapor deposition of high purity copper thin films using plasma reactor with the H atom source

Abstract

Organic polymer thin films deposited on silicon and copper by plasma-enhanced chemical vapor deposition method and characterization of their electrochemical and optical properties J. Vac. Sci. Technol. A 23, 875 (2005); 10.1116/1.1946714 Surface modification of silicon-containing fluorocarbon films prepared by plasma-enhanced chemical vapor deposition J.Optical and compositional study of silicon oxide thin films deposited in a dual-mode (microwave/radiofrequency) plasma-enhanced chemical vapor deposition reactorIn situ Fourier-transform infrared measurements have been carried out to study the effects of H atoms on removing impurities in Cu thin films during plasma enhanced metal organic chemical vapor deposition ͑PEMOCVD͒ using bis͑hexafluoroacetylacetonato͒ copper ͑II͒, Cu͑hfac͒ 2 as a source material. The results show that H atoms are very effective in removing impurities in the film, as well as on its surface. Based on such knowledge regarding the effects of H atoms, a PEMOCVD reactor equipped with an H atom source is developed to control both densities of H atoms and Cu-contained radicals independently. High purity ͑Ϸ100%͒ Cu films of a low resistivity of 2 ⍀ cm can be deposited for a H 2 gas volume fraction of 50%-67% by using the H atom source, while the high purity films were obtained only for a very high H 2 gas volume fraction above about 90% in the case of no H atom source as reported previously. This feature opens up a possibility of deposition of high quality Cu films at a high rate using the reactor equipped with the H atom source, since a gas volume fraction of Cu metal organic material can be increased by more than five times.

Current Trends in Patterning with Copper

“…18,76 Plasma-assisted CVD may be of use for applications requiring blanket growth at low temperatures with high film growth rates. 77 However, nonselective deposition and poor film conformity are the disadvantages of plasma-assisted CVD. 78 Also, the plasma can cause damage to the underlying substrate.…”

“…A gaseous precursor is passed over a heated substrate; contact with the hot surface induces precursor decomposition, resulting in Cu film formation. Thermally induced CVD is used to produce blanket and selectively deposited films of good purity and conformity from a wide range of precursors. , Plasma-assisted CVD may be of use for applications requiring blanket growth at low temperatures with high film growth rates . However, nonselective deposition and poor film conformity are the disadvantages of plasma-assisted CVD .…”

H-assisted plasma CVD of Cu films for interconnects in ultra-large-scale integration

“…The removal rates for irradiation of H atoms and H 2 plasma were also found to increase with increasing T s . Further results concerning the effects of H irradiation on impurity removal have been reported elsewhere [6,12,13].…”

“…In this study, He and H 2 plasmas were irradiated using only the main discharge, while H atoms were irradiated using only the discharge of H atom source. Since absorption intensities at wave numbers due to the impurities have quite similar time evolution [12], we use the absorbance at 1200 cm 21 (C±CF 3 stretching [15]), which is the strongest among them, as a measure of impurity concentration in the Cu ®lms. These results are shown in Fig.…”

Deposition Profile Control of Carbon Films on Patterned Substrates using a Hydrogen-assited Plasma CVD Method

“…DLC films have widespread applications as protective coatings in several areas such as car parts, biomedical coatings and microelectromechanical systems (MEMS). We have succeeded in controlling deposition profile of Cu in trenches, and have realized sub-conformal, conformal and anisotropic deposition, for which Cu is filled preferentially from the bottom of trenches without sidewall deposition, using H-assisted plasma CVD method [6][7][8][9][10][11][12][13][14]. Recently, we have studied deposition profile of plasma CVD Cu films in trenches for nano-fabrications [6][7][8][9][10][11][12][13][14].…”