Plasma-enhanced silicon nitride deposition for thin film transistor applications

Quinn, L.J.; Mitchell, S.J.N.; Armstrong, B.M.; Gamble, Harold

doi:10.1016/0022-3093(95)00162-x

Cited by 7 publications

(4 citation statements)

References 8 publications

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“…Other groups also report that SiN x films with higher N/Si have higher breakdown fields but also report higher static dielectric constants as the layers become more N-rich [26,27], while we report a roughly constant value for the static dielectric constant. The bottom graph shows N fix , which is the number of fixed charges, for simplicity including all fixed, mobile and surface state charges.…”

Section: Dielectric Properties Of Hw-sin Xsupporting

confidence: 65%

Potential of Hot Wire CVD for Active Matrix TFT Manufacturing

2009

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Hot Wire Chemical Vapor Deposition (HWCVD) is a fast deposition technique with high potential for homogeneous deposition of thin films on large area panels or on continuously moving substrates in an in-line manufacturing system. As there are no high-frequency electromagnetic fields, scaling up is not hampered by finite wavelength effects or the requirement to avoid inhomogeneous electrical fields. Since 1996 we have been investigating the application of the HWCVD process for thin film transistor manufacturing. It already appeared then that these Thin Film Transistors (TFTs) were electronically far more stable than those with Plasma Enhanced (PE) CVD amorphous silicon. Recently, we demonstrated that very compact SiN x layers can be deposited at high deposition rates, up to 7 nm/s. The utilization of source gases in HWCVD of a-Si 3 N 4 films deposited at 3 nm/s is 75 % and 7 % for SiH 4 and NH 3 , respectively. Thin films of stoichiometric a-Si 3 N 4 deposited at this rate have a high mass-density of 3.0 g/cm 3 . The dielectric properties have been evaluated further in order to establish their suitability for incorporation in TFTs. Now that all TFT layers, namely, the SiN x insulator, the a-Si:H or µc-Si:H layers, and the n-type doped thin film silicon can easily be manufactured by HWCVD, the prospect of "all HWCVD" TFTs for active matrix production is within reach. We tested the 3 nm/s SiN x material combined with our protocrystalline-Si:H layers deposited at 1 nm/s in 'all HW' TFTs. Results show that the TFTs are state of the art with a field-effect mobility of 0.4 cm 2 /Vs. In order to assess the feasibility of large area deposition we are investigating in-line HWCVD for displays and solar cells.

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Section: Dielectric Properties Of Hw-sin Xsupporting

confidence: 65%

Potential of Hot Wire CVD for Active Matrix TFT Manufacturing

2009

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“…The former applications include device passivation of metal-semiconductor field-effect transistors (MESFETs) [1], high-electron-mobility transistors (HEMTs) [2,3], and heterojunction bipolar transistors (HBTs) [4][5][6], dielectric layers for metal-insulator-metal (MIM) capacitors [7], and glassivation to prevent chips from mechanical damage during the large-volume assembly. Also, the latter application is the blocking layer of impurities diffused from glass substrate to active layer [8].…”

Section: Introductionmentioning

confidence: 99%

Fabrication of MIM capacitors with 1000Å silicon nitride layer deposited by PECVD for InGaP/GaAs HBT applications

Sung

et al. 2005

Journal of Crystal Growth

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“…spin-coating). We demonstrate the use of this process for preparing amorphous silicon nitride (Si 3 N 4 ) substrates, a hard material which has a wide range of applications such as antireflection coatings for solar cells, electronic devices, , transistor dielectrics, , protective layers 17 and tribological coatings. − …”

Section: Introductionmentioning

confidence: 99%

Generic Substrate for the Surface Forces Apparatus: Deposition and Characterization of Silicon Nitride Surfaces

et al. 2000

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We introduce a novel substrate for direct normal and lateral force measurements in the surface forces apparatus (SFA). While most SFA experiments are typically carried out using molecularly smooth mica surfaces, the new layered structure allows the use of just about any material which can be deposited as a thin film using evaporation or chemical vapor deposition. In this work, we demonstrate the use of this method for preparing plasma enhanced chemical vapor deposited silicon nitride substrates. Chemical, structural, optical and mechanical characterization of the substrates was carried out using secondary ion mass spectrometry, atomic force microscopy, transmission electron microscopy, ellipsometry, multiple beam interferometry and SFA force measurements. The latter showed an extremely low adhesion energy (γ < 1 µJ/m 2 ) between silicon nitride surfaces prepared using this method, which is attributed to the surface roughness (ca. 2.2 nm rms).

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Plasma-enhanced silicon nitride deposition for thin film transistor applications

Cited by 7 publications

References 8 publications

Potential of Hot Wire CVD for Active Matrix TFT Manufacturing

Potential of Hot Wire CVD for Active Matrix TFT Manufacturing

Fabrication of MIM capacitors with 1000Å silicon nitride layer deposited by PECVD for InGaP/GaAs HBT applications

Generic Substrate for the Surface Forces Apparatus: Deposition and Characterization of Silicon Nitride Surfaces

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