Plasma Etching

Mucha, J. A.; Hess, Dennis W.

doi:10.1021/bk-1983-0219.ch005

Cited by 17 publications

(15 citation statements)

References 42 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Results for the interaction of N+ with S1F4 are shown in Figure 1. The dominant product at all energies studied is SiF3+, which must be formed in reaction 4 at the lowest energies, because this process is exothermic by 1.42 ± 0.34 eV while formation of SiF3+ + N + F is endothermic by 1.68 ± 0.03 eV. This ion then dissociates to form SiF2+ and SiF+ at higher kinetic energies in reactions 5 and 6. SiF4+ + N (3) SiF3+ + NF (4) SiF2+ + F + NF (5) SiF+ + 2F + NF (6a)…”

Section: Resultsmentioning

confidence: 96%

Dissociative charge-transfer reactions of atomic nitrogen (1+) (3P), dinitrogen (1+) (2.SIGMA.g+), argon(1+) (2P3/2,1/2), and krypton(1+) (2P3/2) with tetrafluorosilane. Thermochemistry of SiF4+ and SiF3+

Kickel¹,

Fisher²,

Armentrout³

1993

J. Phys. Chem.

View full text Add to dashboard Cite

Section: Resultsmentioning

confidence: 96%

Dissociative charge-transfer reactions of atomic nitrogen (1+) (3P), dinitrogen (1+) (2.SIGMA.g+), argon(1+) (2P3/2,1/2), and krypton(1+) (2P3/2) with tetrafluorosilane. Thermochemistry of SiF4+ and SiF3+

Kickel¹,

Fisher²,

Armentrout³

1993

J. Phys. Chem.

View full text Add to dashboard Cite

“…By using OES, the atomic densities of the reactive species within the plasma, here fluorine and oxygen, were calculated using an actinometrical technique, where the fluorine was calculated using the method of Donnelly et al [10] and the oxygen was calculated using the method of Booth et al [11]. In order for the actrinomical technique to be successful the emission of the inert gas must arise from an energy level in close proximity to the excited state giving rise to the species understudy [7]. The lines under investigation were the argon at 751 nm, fluorine at 704 nm and oxygen at 846 nm.…”

Section: Experimental Methodsmentioning

confidence: 99%

“…As the bias voltage applied to the substrate chuck is increased, the potential difference between the positively charged plasma and the negatively biased chuck increases. Within a plasma reactor the negatively biased substrate chuck draws positive ions form the plasma until a balance is reached [7]. It is interesting to note that even at V B = 0 V etching of SiC still takes place.…”

Section: The Influence Of Percentage Of Oxygen Within the Sf 6 /O 2 P...mentioning

confidence: 99%

The etching of silicon carbide in inductively coupled SF₆/O₂plasma

Plank¹,

Blauw²,

Drift³

et al. 2003

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

The etching mechanisms of silicon carbide in an inductively coupled plasma (ICP) reactor using a SF 6 /O 2 gas mixture, have been investigated using optical emission spectroscopy (OES) and Langmuir probe measurements. The etching is shown to be ion induced with a high degree of anisotropy. An optimum etch rate is achieved with 20% oxygen content within the gas mixture. By studying the independent influence of the ICP power and the substrate bias voltage on the ion current density, as well as the fluorine and oxygen radical densities in the plasma, the etch mechanism is found to be dominated by the number of ions bombarding the SiC surface. The steady state sputter yield observed at P > 0.7 Pa, despite the increase in F radical concentration indicates the dominant role of ion bombardment in this etch regime, while at P < 0.7 Pa, the etch mechanism is limited by the number of F radicals in the plasma. The OES results have shown that the etch rate is dependent upon the concentration of reactive radicals present with the [F]/[0] ratio = 8 at the optimum. Whilst using the optimum gas composition, the parameters which dominate the physical side of the reaction, ICP power and bias voltage, produce an increase of the etch rate as the potential difference between the substrate and the plasma is increased.

show abstract

“…sacrificial layer etching, (4) high-speed anisotropic etching for e.g. high-aspect-ratio combdrives, (5) high-selectivity etch masks for reliable pattern definition, (6) smooth surfaces after etching to avoid stress concentration, (7) plasma deposition of polymers for various applications and (8) releasing of movable structures.…”

Section: Why Plasma Etching?mentioning

confidence: 99%

“…A large number of reviews on plasma etching has been published [1][2][3][4][5][6][7][8][9][10][11][12]. However, above all, the present authors are impressed by 'Reactive Ion Etching' by Oehrlein and this reference is taken as a framework to treat many plasma concepts [7].…”

Section: Why Plasma Etching?mentioning

confidence: 99%

A survey on the reactive ion etching of silicon in microtechnology

Jansen

Gardeniers

Boer

et al. 1996

J. Micromech. Microeng.

414

265

View full text Add to dashboard Cite

This article is a brief review of dry etching as applied to pattern transfer, primarily in silicon technology. It focuses on concepts and topics for etching materials of interest in micromechanics. The basis of plasma-assisted etching, the main dry etching technique, is explained and plasma system configurations are described such as reactive ion etching (RIE). An important feature of RIE is its ability to achieve etch directionality. The mechanism behind this directionality and various plasma chemistries to fulfil this task will be explained. Multi-step plasma chemistries are found to be useful to etch, release and passivate micromechanical structures in one run successfully. Plasma etching is extremely sensitive to many variables, making etch results inconsistent and irreproducible. Therefore, important plasma parameters, mask materials and their influences will be treated. Moreover, RIE has its own specific problems, and solutions will be formulated. The result of an RIE process depends in a non-linear way on a great number of parameters. Therefore, a careful data acquisition is necessary. Also, plasma monitoring is needed for the determination of the etch end point for a given process. This review is ended with some promising current trends in plasma etching.

show abstract

Plasma Etching

Cited by 17 publications

References 42 publications

Dissociative charge-transfer reactions of atomic nitrogen (1+) (3P), dinitrogen (1+) (2.SIGMA.g+), argon(1+) (2P3/2,1/2), and krypton(1+) (2P3/2) with tetrafluorosilane. Thermochemistry of SiF4+ and SiF3+

Dissociative charge-transfer reactions of atomic nitrogen (1+) (3P), dinitrogen (1+) (2.SIGMA.g+), argon(1+) (2P3/2,1/2), and krypton(1+) (2P3/2) with tetrafluorosilane. Thermochemistry of SiF4+ and SiF3+

The etching of silicon carbide in inductively coupled SF₆/O₂plasma

A survey on the reactive ion etching of silicon in microtechnology

Contact Info

Product

Resources

About

Plasma Etching

Cited by 17 publications

References 42 publications

Dissociative charge-transfer reactions of atomic nitrogen (1+) (3P), dinitrogen (1+) (2.SIGMA.g+), argon(1+) (2P3/2,1/2), and krypton(1+) (2P3/2) with tetrafluorosilane. Thermochemistry of SiF4+ and SiF3+

Dissociative charge-transfer reactions of atomic nitrogen (1+) (3P), dinitrogen (1+) (2.SIGMA.g+), argon(1+) (2P3/2,1/2), and krypton(1+) (2P3/2) with tetrafluorosilane. Thermochemistry of SiF4+ and SiF3+

The etching of silicon carbide in inductively coupled SF6/O2plasma

A survey on the reactive ion etching of silicon in microtechnology

Contact Info

Product

Resources

About

The etching of silicon carbide in inductively coupled SF₆/O₂plasma