Plasma immersion ion implantation—a fledgling technique for semiconductor processing

Chu, Paul K.; Qin, Shu; Chan, Chung; Cheung, N.W.; Larson, Larry L.

doi:10.1016/s0927-796x(96)00194-5

Cited by 343 publications

(126 citation statements)

References 88 publications

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“…PIII can also serve as a pretreatment step for subsequent film deposition. By implanting the proper gaseous and/or metallic elements into the materials, characteristics such as film adhesion can be enhanced and thermal stress between the deposited and bulk materials can be allayed [38][39][40][41]. However, although PIII excels in the treatment of components with a complex geometry compared to beam-line ion implantation, the dose uniformity may not be very good unless the process is optimized.…”

Section: Plasma Implantationmentioning

confidence: 99%

Plasma-surface modification of biomaterials

Chu

Chen

Wang

et al. 2002

Materials Science and Engineering: R: Reports

1,423

652

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Plasma-surface modification (PSM) is an effective and economical surface treatment technique for many materials and of growing interests in biomedical engineering. This article reviews the various common plasma techniques and experimental methods as applied to biomedical materials research, such as plasma sputtering and etching, plasma implantation, plasma deposition, plasma polymerization, laser plasma deposition, plasma spraying, and so on. The unique advantage of plasma modification is that the surface properties and biocompatibility can be enhanced selectively while the bulk attributes of the materials remain unchanged. Existing materials can, thus, be used and needs for new classes of materials may be obviated thereby shortening the time to develop novel and better biomedical devices. Recent work has spurred a number of very interesting applications in the biomedical field. This review article concentrates upon the current status of these techniques, new applications, and achievements pertaining to biomedical materials research. Examples described include hard tissue replacements, blood contacting prostheses, ophthalmic devices, and other products. #

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Section: Plasma Implantationmentioning

confidence: 99%

Plasma-surface modification of biomaterials

Chu

Chen

Wang

et al. 2002

Materials Science and Engineering: R: Reports

1,423

652

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“…Several alternative techniques have been proposed for fabricating USJ. The most promising candidates are plasma implantation methods which include pulsed plasma doping and plasma immersion ion implantation (PIII) [1].…”

Section: Time Evolution Of Ion Energy Distributions For Plasma Dopingmentioning

confidence: 99%

Time evolution of ion energy distributions for plasma doping

Agarwal

Kushner

2005

IEEE Trans. Plasma Sci.

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Abstract-Plasma doping of semiconductors is being investigated for low-energy ion implantation to form ultra-shallow junctions. Ions are extracted from a quasi-dc plasma using a pulsed bias on the substrate. The shape of the resulting ion energy and angular distribution (IEAD) is particularly important with respect to obtaining desired junction characteristics. Images are presented of the time evolution of the IEAD in a plasma doping system.

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“…7 Plasma hydrogenation was done in a plasma ion immersion implantation equipment using a rf plasma source. 8,9 The sample holder was negatively biased with a voltage of 500 V and kept at about 280 or 350°C during hydrogenation for different time. Optical microscopy using Nomarski lenses was used to detect bubble formation on the sample surface after hydrogenation.…”

mentioning

confidence: 99%

Investigation of plasma hydrogenation and trapping mechanism for layer transfer

Chen

Chu

Höchbauer

et al. 2005

Applied Physics Letters

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Hydrogen ion implantation is conventionally used to initiate the transfer of Si thin layers onto Si wafers coated with thermal oxide. In this work, we studied the feasibility of using plasma hydrogenation to replace high dose H implantation for layer transfer. Boron ion implantation was used to introduce H-trapping centers into Si wafers to illustrate the idea. Instead of the widely recognized interactions between boron and hydrogen atoms, this study showed that lattice damage, i.e., dangling bonds, traps H atoms and can lead to surface blistering during hydrogenation or upon postannealing at higher temperature. The B implantation and subsequent processes control the uniformity of H trapping and the trap depths. While the trap centers were introduced by B implantation in this study, there are many other means to do the same without implantation. Our results suggest an innovative way to achieve high quality transfer of Si layers without H implantation at high energies and high doses.

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Plasma immersion ion implantation—a fledgling technique for semiconductor processing

Cited by 343 publications

References 88 publications

Plasma-surface modification of biomaterials

Plasma-surface modification of biomaterials

Time evolution of ion energy distributions for plasma doping

Investigation of plasma hydrogenation and trapping mechanism for layer transfer

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