2006
DOI: 10.1016/j.surfcoat.2005.12.002
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Plasma nitriding of Al alloys by DC glow discharge

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Cited by 45 publications
(30 citation statements)
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“…Intensity of AlN increases with increase in time durations at both pressures, which shows that the thickness of the nitride layer increases with time [2]. When the nitriding time increases, the nitrogen content and its density increase to give a continuous AlN layer [18]. The kinetic energy of colliding ions and neutrals can increase the surface diffusion and chemical reaction, improving the surface layer [20].…”
Section: X-ray Diffraction Analysismentioning
confidence: 93%
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“…Intensity of AlN increases with increase in time durations at both pressures, which shows that the thickness of the nitride layer increases with time [2]. When the nitriding time increases, the nitrogen content and its density increase to give a continuous AlN layer [18]. The kinetic energy of colliding ions and neutrals can increase the surface diffusion and chemical reaction, improving the surface layer [20].…”
Section: X-ray Diffraction Analysismentioning
confidence: 93%
“…The variation and distribution of these phases can be obtained by comparing the intensities of the Al and AlN diffraction lines for different time and pressure treatment. The peak locations of the AlN phase also change in the nitrided surface layer as a result of nitrogen diffusion [17,18]. Figure 5 shows two peaks of Al and AlN phases at 1 and 2 mbar pressures for different time durations plotted separately with a narrow range of angle in order to show the changes.…”
Section: X-ray Diffraction Analysismentioning
confidence: 99%
“…Chemical composition (wt%) of the main alloying elements in the Al 1100 is determined by EDX. The pressure of sample chamber was reduced to 10 −3 Pa by a rotary pump, and then by using a diffusion pump, the chamber evacuated to 10 −5 Pa. Because of the presence of aluminum oxide (Al 2 O 3 ) layer on the surface of every Al alloy that prevents the diffusing of carbon into the substrate, therefore, it is essential to remove the oxide layer by a treatment ioncleaning step called sputtering just before carburizing and to operate at low pressure [7]. Sputtering was performed in argon-hydrogen mixture with the total pressure of 0.12 torr, with the ratio of 30% H 2 and 70% Argon, and substrate temperature of 450…”
Section: Methodsmentioning
confidence: 99%
“…There have been recent interests in the area of glow discharge plasmas applications, such as etching, semiconductor wafer processing, treatment of fibrous materials and surface modification by deposition of diamond films [1,2]. DC glow discharges in the low-pressure regime have long been used for gas lasers and fluorescent lamps.…”
Section: Introductionmentioning
confidence: 99%