Plasma Parameters and Kinetics of Active Particles in the Mixture CHF3 + O2 + Ar

Efremov, Alexander; Murin, D. B.; Kwon, Kwang‐Ho

doi:10.1134/s1063739720030038

Cited by 8 publications

(8 citation statements)

References 27 publications

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“…From plasma diagnostics experiments, it was found that effects of CHF3/O2 mixing ratio on electrons-and ions-related plasma parameters (Tab. 1) are quite similar to those found for the O2/Ar mixing ratio in the CHF3 + O2 + Ar plasma [17,18,21].…”

Section: Resultssupporting

confidence: 84%

“…In order to obtain the data on kinetics and densities of plasma active species, we applied a simplified 0-dimensional (global) plasma model. The kinetic scheme (the set of chemical reaction with corresponding rate coefficients) was taken from published works dealt with the modeling of CHF3 + Ar [16,20] and CHF3 + Ar + O2 [18][19][20][21] and Ar + O2 [22] plasmas. Comprehensive information on model assumptions and algorithm may be found in our previous works [16][17][18][19][20].…”

Section: Plasma Modelingmentioning

confidence: 99%

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Features of Plasma Composition and Fluorine Atom Kinetics in Chf3 + O2 Gas Mixture

2023

Izv. Vyssh. Uchebn. Zaved. Khim. Khim. Tekhnol.

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The effects of initial composition of CHF3 + O2 gas mixture on electro-physical plasma parameters, steady-state densities of active species and fluorine atom kinetics were investigated under the condition of constant gas pressure and input power. The combination of plasma diagnostics by Langmuir probes and model-based analysis of plasma chemistry confirmed known from previous work features of plasma composition in the absence of oxygen (in particular, the domination of HF molecules in a gas phase) as well as demonstrated how the oxygen influences steady-state densities of neutral species through kinetics of both electron-impact and atom-molecular reactions. It was shown that the addition of O2 with a proportional decrease in the content of CHF3 a) results in noticeable changes in electrons- and ions-related plasma parameters (electron temperature, electron density, ion flux); b) provides the effective conversion of fluorocarbon radicals (CHFx, CFx) into such compounds as CFxO, FO and COx; and b) causes an increase in the fluorine atom density up to 50% O2. The last phenomenon contradicts with the change in the total F atom formation rate, but reflects a decrease of their loss frequency in the reaction family of CHFx + F → CFx + HF. The model-based analysis of heterogeneous process kinetics was carried out using the set of tracing parameters based on gas-phase plasma characteristics. It was found that the addition of oxygen lowers the plasma polymerizing ability through both decreasing flux of polymerizing species and accelerating the oxidative destruction of deposited polymer film.

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Section: Resultssupporting

confidence: 84%

Section: Plasma Modelingmentioning

confidence: 99%

Features of Plasma Composition and Fluorine Atom Kinetics in Chf3 + O2 Gas Mixture

2023

Izv. Vyssh. Uchebn. Zaved. Khim. Khim. Tekhnol.

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“…The indirect proof for this suggestion is the nearly constant temperature of the external chamber wall obtained for different gas mixing ratios at fixed plasma on time. Since experimental data on

were not available in this study, we took 600–700 K as the typical value for close processing conditions, reactor type and geometry [ 47 , 48 , 49 , 50 , 51 , 52 , 53 ]. This allowed us to operate with constant rate coefficients for gas-phase atom molecular reactions, which were taken from the NIST(National Institute of Standards and Technology) Chemical Kinetics Database [ 59 ].…”

Section: Methodsmentioning

confidence: 99%

“…In order to obtain information on the kinetics and densities of plasma active species, we applied a simplified 0-dimensional (global) kinetic model [47,48]. A set of chemical reactions with corresponding rate coefficients was taken from our previous works that dealt with the modeling of CF 4 + Ar/O 2 [40,[47][48][49][50], CHF 3 + Ar/O 2 [50][51][52][53] and C 4 F 8 + Ar/O 2 [36,39,43,48,54] plasmas. The basic model approaches were as follows:…”

Section: Approaches For Analysis Of Gas-phase Chemistrymentioning

confidence: 99%

On Relationships between Gas-Phase Chemistry and Reactive Ion Etching Kinetics for Silicon-Based Thin Films (SiC, SiO2 and SixNy) in Multi-Component Fluorocarbon Gas Mixtures

2021

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This work summarizes the results of our previous studies related to investigations of reactive ion etching kinetics and mechanisms for widely used silicon-based materials (SiC, SiO2, and SixNy) as well as for the silicon itself in multi-component fluorocarbon gas mixtures. The main subjects were the three-component systems composed either by one fluorocarbon component (СF4, C4F8, CHF3) with Ar and O2 or by two fluorocarbon components with one additive gas. The investigation scheme included plasma diagnostics by Langmuir probes and model-based analysis of plasma chemistry and heterogeneous reaction kinetics. The combination of these methods allowed one (a) to figure out key processes which determine the steady-state plasma parameters and densities of active species; (b) to understand relationships between processing conditions and basic heterogeneous process kinetics; (c) to analyze etching mechanisms in terms of process-condition-dependent effective reaction probability and etching yield; and (d) to suggest the set gas-phase-related parameters (fluxes and flux-to-flux ratios) to control the thickness of the fluorocarbon polymer film and the change in the etching/polymerization balance. It was shown that non-monotonic etching rates as functions of gas mixing ratios may result from monotonic but opposite changes in F atoms flux and effective reaction probability. The latter depends either on the fluorocarbon film thickness (in high-polymerizing and oxygen-less gas systems) or on heterogeneous processes with a participation of O atoms (in oxygen-containing plasmas). It was suggested that an increase in O2 fraction in a feed gas may suppress the effective reaction probability through decreasing amounts of free adsorption sites and oxidation of surface atoms.

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“…Recently, a whole research area devoted to plasma systems of active particles has emerged. These are both plasma systems with micron-sized macroscopic particles immersed in them [ 1 , 2 , 3 , 4 ] and more traditional plasma systems without a dust component [ 5 , 6 ]. Such plasma formations are open particle systems in which, due to specially selected external conditions, it is possible to transform chaotic thermal motion into directed flows of active particles.…”

Section: Introductionmentioning

confidence: 99%

The Optimal Axis-Symmetrical Plasma Potential Distribution for Plasma Mass Separation

et al. 2022

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The mass separation of chemical element mixtures is a relevant task for numerous applications in the nuclear power industry. One of the promising approaches to solve this problem is plasma mass separation. In a recent study, the efficiency of plasma mass separation in a configuration with a potential well and a homogeneous magnetic field was experimentally demonstrated. This article examines the possibility of increasing the distance between the deposition regions of charged particles with different masses by varying the profile of the electric field potential. Such correlation can be considered as the control in a system of active particles. A cylindrical coordinate system is used. The electric field is axially symmetrical, and the magnetic field is directed along the axis of the symmetry. The corresponding mathematical problem was solved in a general way. The criteria for increasing the distance between the deposition areas of the “light” and “heavy” components of the mixture have been formulated. A high sensitivity of particle trajectories to the electric field potential in the region of the pericentres of the trajectories of charged particles was detected. Recommendations for the practical implementation of the optimal spatial separation of ion fluxes are proposed.

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Plasma Parameters and Kinetics of Active Particles in the Mixture CHF3 + O2 + Ar

Cited by 8 publications

References 27 publications

Features of Plasma Composition and Fluorine Atom Kinetics in Chf3 + O2 Gas Mixture

Features of Plasma Composition and Fluorine Atom Kinetics in Chf3 + O2 Gas Mixture

On Relationships between Gas-Phase Chemistry and Reactive Ion Etching Kinetics for Silicon-Based Thin Films (SiC, SiO2 and SixNy) in Multi-Component Fluorocarbon Gas Mixtures

The Optimal Axis-Symmetrical Plasma Potential Distribution for Plasma Mass Separation

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