Plasma Process. Polym. 9/2008

Kutasi, Kinga; Saoudi, Bachir; Pintassilgo, C. D.; Loureiro, Jorge; Moisan, M.

doi:10.1002/ppap.200890015

Cited by 5 publications

(8 citation statements)

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“…As for the O concentration at the entrance, it continues to increase with increasing O 2 concentration while the one at the exit decreases by about a factor of 2 between 2 and 5%. Overall, the behavior observed with the O 2 concentration is corroborated by fluid models, which reveal more important loss rates for N species than for O species in the late afterglow region …”

Section: Resultssupporting

confidence: 53%

“…Overall, the behavior observed with the O 2 concentration is corroborated by fluid models, which reveal more important loss rates for N species than for O species in the late afterglow region. [16,17] After this spectroscopic analysis realized in the absence of wood, hardwood, and softwood samples were placed at the entrance of the treatment chamber and the populations of N and O atoms were again recorded by the calibrated optical emission spectroscopy technique described above. Measurements were performed at the exit of the treatment chamber in order to ensure a significant influence on N and O species following their interaction with wood surfaces (see Figure 1).…”

Section: Experimental Setup and Methodsmentioning

confidence: 99%

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Interaction of N and O atoms with hardwood and softwood surfaces in the flowing afterglow of N₂‐O₂ microwave plasmas

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Robert-Bigras

Stafford

2018

Plasma Processes & Polymers

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The interaction between hardwood (Sugar Maple) and softwood (Black Spruce) surfaces and N and O atom species produced in the flowing late afterglow of a surface‐wave microwave plasma column in N2‐O2 gas mixtures was investigated using a NO titration method combined with optical emission spectroscopy. Results showed two distinct atom loss regimes following their interaction with wood surfaces: a recombination regime at low oxygen concentrations (<1% O2) and an etching regime by O atoms at higher oxygen concentrations (>1% O2). The etching reaction was confirmed by surface profilometry measurements, with the formation of sub‐millimetre trenches between low‐density early wood and high‐density late wood regions. Recombination dynamics of O and N atoms over smooth and roughened wood regions are also compared.

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Section: Resultssupporting

confidence: 53%

Section: Experimental Setup and Methodsmentioning

confidence: 99%

Interaction of N and O atoms with hardwood and softwood surfaces in the flowing afterglow of N₂‐O₂ microwave plasmas

Prégent

Robert-Bigras

Stafford

2018

Plasma Processes & Polymers

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“…The rate coefficients are taken from Ref. [12,24,13]. The rate coefficients for the two and three body reactions are in m 3 s −1 and m 6 s −1 , respectively, and the decay frequencies are in s −1 .…”

Section: Processesmentioning

confidence: 99%

“…in low pressure N 2 -O 2 surface wave discharges depending on frequency and discharge tube radius the dissociation degree can be a few percent [11,10,12], which further decreases in the afterglow due to the N atoms recombination. In N 2 -O 2 systems, that are successfully used for plasma sterilization the formation of UV emitting excited NO(A,B) molecules through the N and O atoms association process in the afterglow is limited by the N atoms density, the N 2 being less dissociated than the O 2 [13,14]. However, in the expanding thermal plasma (ETP) presented by van Helden et al [15] higher N 2 dissociation degrees may be achieved outside the active discharge region.…”

Section: Introductionmentioning

confidence: 99%

Composition of a plasma generated from N₂–O₂ by an Ar ion jet in a low pressure reactor

Kutasi

2010

J. Phys. D: Appl. Phys.

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The expansion of a supersonic Ar + ion jet in a low pressure (0.2 Torr) reactor filled with N 2 and O 2 has been investigated by means of hydrodynamic modelling. The gas velocity fields and the gas temperature distribution in the threedimensional reactor have been determined. The formation of different species through the molecular kinetics triggered by the collision of Ar + ions with N 2 and O 2 molecules has been studied. We have investigated the effect of the ions velocity and molecular gas flow rates on the gas temperature and species density distributions. We have shown that the main difference between this system and an N 2 -O 2 post-discharge lies in the dissociation degrees of N 2 and O 2 . While in an N 2 -O 2 post-discharge the N 2 dissociation degree is low and that of O 2 is high, in the present system this can be varied through the gas flow rate of the molecular gases. We have also shown that the NO(X) molecules formation is governed by the surface processes, that is strongly influenced by the state of the surface.Composition of a plasma generated from N 2 -O 2 by an Ar ion jet in a low pressure reactor4 System set-upThe system investigated in this work has a similar structure as that of van de Sanden et al [18] and van Helden et al [15]. Here the plasma reactor is a parallelepipedic stainless steel chamber with dimensions of 40cm×25cm×25cm (x, y, z). The 4×4 mm 2 square inlet, where the high velocity − 2000 ms −1 according to Engeln et al [17] − Ar + ions from the dc cascaded arc source enter the reactor is located in the middle on the left plate, while the 4×4 cm 2 gas outlet of the top plate, as it is shown in Figure 1. Two more inlets of 4×4 cm 2 , which serve as inlets for the molecular gases, are located on the bottom and top plates, respectively, at about 2 cm from the left plate.

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“…Two generic plasma configurations are nowadays being investigated. One of them is when sterilization takes place within the discharge region [187] and the other is when it takes place in its flowing afterglow [190,191].…”

Section: Plasma Sterilizationmentioning

confidence: 99%

Nanotechnology for Electronics, Photonics, and Renewable Energy

Korkin¹,

Krstić²,

Wells³

2010

Nanostructure Science and Technology

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), except for brief excerpts in connection with reviews or scholarly analysis. Use in connection with any form of information storage and retrieval, electronic adaptation, computer software, or by similar or dissimilar methodology now known or hereafter developed is forbidden. The use in this publication of trade names, trademarks, service marks, and similar terms, even if they are not identified as such, is not to be taken as an expression of opinion as to whether or not they are subject to proprietary rights.Printed on acid-free paper Springer is part of Springer Science+Business Media (www.springer.com) PrefaceTutorial lectures given by world-renowned researchers have become one of the important traditions of the Nano and Giga Challenges (NGC) conference series. Soon after preparations had begun for the first forum, NGC2002, 1 in Moscow, Russia, the organizers realized that publication of the lectures notes would be a valuable legacy of the meeting and a significant educational resource and knowledge base for students, young researchers, and senior experts. Our first book was published by Elsevier and received the same title as the meeting itself-Nano and Giga Challenges in Microelectronics. 2 Our second book, Nanotechnology for Electronic Materials and Devices, 3 based on the tutorial lectures at NGC2004 4 in Krakow, Poland, the third book from NGC2007 5 in Phoenix, Arizona, and the current book from joint NGC2009 and CSTC2009 6 meeting in Hamilton, Ontario, have been published in Springer's Nanostructure Science and Technology series. Hosted by McMaster University, the meeting NGC/CSTC 2009 was held as a joint event of two conference series, Nano and Giga Challenges (Nano & Giga Forum) and Canadian Semiconductor Technology Conferences (CSTC), bringing together the networks and expertise of both professional forums.Informational (electronics and photonics), renewable energy (solar systems, fuel cells, and batteries), and sensor (nano and bio) technologies have reached a new stage in their development in terms of engineering limits to cost-effective improvement of current technological approaches. The latest miniaturization of electronic devices is approaching atomic dimensions. Interconnect bottlenecks are limiting circuit speeds, new materials are being introduced into microelectronics manufacture at an unprecedented rate, and alternative technologies to mainstream CMOS are being considered. The low cost of natural energy sources and ignorance of the limits and environmental impact from use of natural carbon-based fuels have been long-standing economic barriers to the development of alternative and more efficient solar systems, fuel cells, and batteries. Nanotechnology is widely accepted as a source of potential solutions in securing future progress in information and energy technologies. Nanotechnology as the art (i.e., science and technique) of control, manipulation, and fabrication of devices with structural and functional attributes smaller than 100 nm is perfectly suited to advanced CMOS technology. Th...

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Plasma Process. Polym. 9/2008

Cited by 5 publications

References 0 publications

Interaction of N and O atoms with hardwood and softwood surfaces in the flowing afterglow of N₂‐O₂ microwave plasmas

Interaction of N and O atoms with hardwood and softwood surfaces in the flowing afterglow of N₂‐O₂ microwave plasmas

Composition of a plasma generated from N₂–O₂ by an Ar ion jet in a low pressure reactor

Nanotechnology for Electronics, Photonics, and Renewable Energy

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Plasma Process. Polym. 9/2008

Cited by 5 publications

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Interaction of N and O atoms with hardwood and softwood surfaces in the flowing afterglow of N2‐O2 microwave plasmas

Interaction of N and O atoms with hardwood and softwood surfaces in the flowing afterglow of N2‐O2 microwave plasmas

Composition of a plasma generated from N2–O2 by an Ar ion jet in a low pressure reactor

Nanotechnology for Electronics, Photonics, and Renewable Energy

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Product

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Interaction of N and O atoms with hardwood and softwood surfaces in the flowing afterglow of N₂‐O₂ microwave plasmas

Interaction of N and O atoms with hardwood and softwood surfaces in the flowing afterglow of N₂‐O₂ microwave plasmas

Composition of a plasma generated from N₂–O₂ by an Ar ion jet in a low pressure reactor