Plasma resonance in TiO, VO and NbO

Rao, C. N. R.; Wahnsiedler, W.E.; Honig, J.M.

doi:10.1016/0022-4596(70)90089-7

Cited by 15 publications

(2 citation statements)

References 9 publications

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“…Un plasmon a été directement mis en évidence, à basse énergie (~ 3,8 eV), d'après la position d'un minimum très prononcé que plusieurs auteurs ont observé dans le pouvoir réflecteur de TiO [44,45] ; un plasmon des électrons de conduction a été trouvé également, à basse énergie, dans V02 métallique [46]. Cette observation expérimentale semble confirmer la configuration électronique suggérée dans la figure 7 : ce plasmon viendrait s'intercaler entre deux séries d'excitations nettement découplées en énergie, l'une concernant les électrons du bas de la bande de conduction, l'autre ceux de la bande sous-jacente 0 2p.…”

Section: Excitation Collective Des éLectrons Deunclassified

Excitations électroniques dans TiO2 rutile et TiO mesure des pertes d'énergie des électrons entre 3 et 60 eV

1978

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2014 Les spectres de pertes d'énergie d'électrons de 20 keV transmis par des couches minces de TiO2 et TiO ont été obtenus, et les fonctions optiques calculées jusqu'à 60 eV par analyse de Kramers-Kronig. Les excitations à un électron et les modes collectifs, dans les deux oxydes, sont discutés sur la base de nos résultats et de ceux existant dans la littérature. Abstract. 2014 The energy loss spectra of 20 keV electrons passing through thin films of TiO2 and TiO have been obtained. Optical functions are calculated up to 60 eV using Kramers-Kronig analysis. One-electron excitations and collective modes in these two oxides are discussed and the results are compared with those previously published.

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Section: Excitation Collective Des éLectrons Deunclassified

Excitations électroniques dans TiO2 rutile et TiO mesure des pertes d'énergie des électrons entre 3 et 60 eV

1978

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“…The resistivity of thin films with thickness above 240 nm is lower, but still higher than that of TiO bulk material. 16 The higher resistivity of the thin films must be caused by incomplete crystallization or finer grains, because the diffraction peaks of TiO are broader.…”

Section: Relationship Between Resistivity and Thickness Of Tio Thin Fmentioning

confidence: 99%

Ti-O Direct-Current-Sintered Bodies and Their Use for Sputter Deposition of TiO Thin Films: Fabrication and Characterization

Tomozawa

Ozaki

Mikami

et al. 2010

Journal of Elec Materi

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Ti-50at.%O and Ti-40at.%O sintered bodies were fabricated by direct-current sintering using Ti and TiO 2 powders as starting materials. Their microstructures were investigated by x-ray diffraction and optical microscopy. Ti-O thin films were deposited on glass substrates by radiofrequency (RF) magnetron sputtering using a Ti-50at.%O or Ti-40at.%O sintered body as a sputtering target. A crystalline TiO thin film was obtained using a Ti-40at.%O sputtering target, while an amorphous or Ti 6 O 11 thin film was obtained using a Ti-50at.%O sputtering target. The electric resistivity of the TiO thin films was 450 lX cm to 1000 lX cm depending on their thickness.

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Studies of the Band Structure of NbO by X‐Ray Photoelectróh Spectroscopy

Honig

Sinha

Wahnsiedler

et al. 1976

Physica Status Solidi (b)

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I n conjunction with ongoing measurements on electrical properties [l to 31 and band structure calculations [4] for NbO, the X-ray photoelectron spectra (XPS) of this compound have been measwed. No prior work of this type seems to have been reported for this material.Single crystals of high perfection and purity were grown as described elsewhere [5]. The experimental procedures and requisite precautions for the XPS mearurements have been discussed in publications pertaining to SrTiO, [6] and V20, [7]. The purity of the oxide and, more particularly, the absence of any other oxide of NbO, was checked by examining the 0-1s and Nb3d peaks. It was found that although immediately after surface cleaning by argon ion bombardment, the oxygen peak was narrow and reasonably symmetric, it became asymmetric and broad after several hours of run required for mapping the conduction band. However, this problem was minimized to a considerable extent, when the sample inlet tube of the machine was enclosed in a dry box maintained in an atmosphere of dry nitrogen. The sample was subjected to Ar ion bombardment to etch the surface.The instrument calibration was done by measuring the binding energy of 4fvl2 level of gold from a thin layer evaporated on to the sample and setting this value equal to 83.8 eV. All the measured levels were thus referenced to the Fermi level of gold and hence, indirectly, to that of NbO.

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Plasma resonance in TiO, VO and NbO

Cited by 15 publications

References 9 publications

Excitations électroniques dans TiO2 rutile et TiO mesure des pertes d'énergie des électrons entre 3 et 60 eV

Excitations électroniques dans TiO2 rutile et TiO mesure des pertes d'énergie des électrons entre 3 et 60 eV

Ti-O Direct-Current-Sintered Bodies and Their Use for Sputter Deposition of TiO Thin Films: Fabrication and Characterization

Studies of the Band Structure of NbO by X‐Ray Photoelectróh Spectroscopy

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