Plasma texturing of multicrystalline silicon for solar cell using remote-type pin-to-plate dielectric barrier discharge

Abstract

Multicrystalline silicon (mc-Si) was etched using a pin-to-plate-type remote dielectric barrier discharge, and the effect of adding NF 3 to N 2 (40 slm) and O 2 to N 2 (40 slm)/NF 3 (1 slm) on the characteristics of mc-Si etching and texturing was investigated. The addition of NF 3 at flow rates up to that of N 2 increased the mc-Si etch rate continuously by increasing the number of F radicals in the gas mixture. Furthermore, the addition of O 2 at flow rates of up to 400 sccm to N 2 (40 slm)/NF 3 (1 slm) further increased the mc-Si etch rate by more than two times (749.6 nm/scan, 0.25 m min −1), as compared with that without oxygen by the further dissociation of NF 3 caused by oxygen. In particular, the addition of O 2 to N 2 /NF 3 increased the surface roughness, due to the micromasking (local surface oxidation) effect and, by adding 600 sccm O 2 , a reflectance of 20-30% in the visible wavelength could be obtained due to the formation of optimal wave-type surface morphology.

Cross Sections for Electron Collisions with NF3

“…NF 3 is widely used for semiconductor fabrication processes which include direct etching 2,3 , reactor cleaning 4 and remote plasma sources 5 , where use of pure NF 3 typically limits the reactants reaching the processing chamber to F x and NF x species only. NF 3 is also used in the production of thin films 6,7 and solar cells 8,9 ; it provides the initial gas for the HF chemical laser [10][11][12] . NF 3 is actually a greenhouse gas with a very high global warming potential which has led to concern on how it is used in the various technologies discussed above 13 .…”

Atmospheric pressure plasmas for surface modification of flexible and printed electronic devices: A review

“…There are numerous variations of these DBD sources, some of which are shown in Figures 1(d) to (f). By using a multi-pin shaped, instead of a planar, electrode as the power electrode, a higher plasma density was obtained for the simple parallel plate DBD source and the remote DBD source shown in Figures 1(d) and (e), respectively, due to the concentration of the electric field near the tip area [10][11][12]. A double-discharge system composed of direct DBDs and remote DBDs was also investigated to improve the plasma density and gas dissociation, and to provide ion bombardment at the substrate [13][14].…”

“…APPs with micro-masking and selective etching processes have been used as a potential tool for microscopic texturing on a variety of substrates, including polymers for roll-to-roll processing, to increase ink adhesion, to enhance the light collection efficiency of solar cells, etc. [11][12][52][53].…”

“…An APP system, such as shown in Figure 1(e), was used by J. Park et al [12] to remove the saw damage and texture mc-Si surfaces.…”

Dry texturing of mc‐Si wafers

“…To reduce these reflectivity losses surface texturing becomes important in addition to standard anti-reflection coatings (ARC). Plasma induced geometrical texturing of multicrystalline silicon (mc-Si) wafers has proven its potential in the field of solar cell fabrication, by many researchers due to their keen interest in current developing photovoltaic technology [1][2][3]. Dry plasma texturing provides surface structures suitable for solar cell fabrication.…”