Plasmon excitation in vanadium dioxide films

Felde, B.; Niessner, W.; Schalch, D.; Scharmann, A.; Werling, M.

doi:10.1016/s0040-6090(97)00148-x

Cited by 27 publications

(13 citation statements)

References 12 publications

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“…The role of these strains is especially significant in the case of thin films [5][6][7][8] and single microcrystals bound by the forces of adhe sion to the substrate [9,10]. Eventually, it is this cir cumstance that allows one to consider the structural transition in vanadium dioxide as a strain driven phase transition [10].…”

Section: Resultsmentioning

confidence: 99%

Influence of hydrogenation on electrical conductivity of vanadium dioxide thin films

2012

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The influence of hydrogenation on electrical conductivity of vanadium dioxide thin films has been investigated. It has been shown using measurements of the electrical conductivity that the hydrogenation of vanadium dioxide thin films leads to a decrease in the temperature of the phase transition from the tetragonal phase (with "metallic" conductivity) to the semiconducting monoclinic phase. It has been found that, upon doping of vanadium dioxide with hydrogen, the electrical conductivity of the monoclinic phase can increase by several orders of magnitude. Nonetheless, the temperature dependence of the electrical conductivity of hydrogenated films exhibits a typical semiconducting behavior in the temperature range where the mono clinic phase is stable.

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Section: Resultsmentioning

confidence: 99%

Influence of hydrogenation on electrical conductivity of vanadium dioxide thin films

2012

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“…Using the resistivity data measured at the temperatures from room temperature up to 60°C in insulating state, or to be more precise in this context, in semiconducting state of the films, the activation energy of E a ≈ 0.12 eV could be calculated for thermally activated n-type conduction of electrons. Using the electron density n ≈ 1 × 10 21 cm −3 reported in literature for monoclinic VO 2 [8], the mobility value of μ = 4.4 × 10 −4 cm 2 /Vs was calculated. According to the Drude model [9], the rate at which heat Q is generated per unit volume, and which eventually leads to the increase of the temperature, dQ / dt, is related to electric power P V / JE ¼ sE 2 , and hence the increased insulator state conductivity σ is believed to have an important contribution to change in switching behavior shown in Figs.…”

Section: Resultsmentioning

confidence: 99%

Electrical and optical properties of metal-insulator-transition VO2 thin films

et al. 2008

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Vanadium dioxide thin films were deposited using in situ pulsed laser deposition technique on a-, c-, and r-plane Al 2 O 3, and MgO(100) substrates. Microstructure of the films was varied between epitaxial VO 2 , polycrystalline VO 2 , mixtures of VO 2 and V 6 O 13 with VO 2 as the main phase, and mixtures of VO 2 and V 6 O 13 with V 6 O 13 as the main phase by controlling the deposition oxygen partial pressure. Detailed XRD, SPM, and FESEM measurements were performed in order to analyze the structure of the films. Resistivity as a function of temperature, current-voltage characteristics in electric current induced Joule heating transition process, and the optical transmittance both in insulator and metal states were measured. MIT effect led to 10 3 -10 5 change in resistivity with varying transition temperature and hysteresis loop widths. The largest and the steepest transitions were found in the films with polycrystalline microstructure deposited at higher oxygen pressures. Epitaxial films had 2.5 times higher insulator state conductivity than polycrystalline films, which lead to a clearly smaller switching powers in MIT effect generated by Joule heating. However, the optical properties in both states were not considerable affected by conductivity or microstructure properties. The relationships between the microstructure, electrical and optical properties, as well as MIT switching effect together its dynamics in the films are discussed.

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“…Moreover, grain boundaries in films are responsible for the marked band-tailing deep into the gaps [17] . Increase of the grain size results in the reduction of the grain boundary density, which results in the increase of conductivity of the thin films [18] .…”

Section: Resultsmentioning

confidence: 99%

Influence of substrate temperature on the morphology and thermal resistance of vanadium oxide thin films

Wei

Wang

et al. 2008

SPIE Proceedings

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The dependence of morphology and thermal resistance on the substrate temperature during the deposition of the vanadium oxide thin films (VOx) was studied. Atomic-force microscopy (AFM) analysis results revealed that the structural features of VOx thin films strongly depend on the substrate temperature. Analysis of square resistance and its temperature dependence demonstrated that the difference of morphology introduced by substrate temperature plays an important role on the electrical properties of the films. The width of the thermal resistance hysteresis loop was also observed varied with the substrate temperature.

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Plasmon excitation in vanadium dioxide films

Cited by 27 publications

References 12 publications

Influence of hydrogenation on electrical conductivity of vanadium dioxide thin films

Influence of hydrogenation on electrical conductivity of vanadium dioxide thin films

Electrical and optical properties of metal-insulator-transition VO2 thin films

Influence of substrate temperature on the morphology and thermal resistance of vanadium oxide thin films

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