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Aluminium nitride films are deposited by reactive rf sputtering, and a wide variation of deposition parameters is examined. Optical and structural properties dependent on these parameters are studied, and e.g. the optical band gap, the degree of crystallinity, and the effects of hydrogen incorporation are determined. Electronic properties of the films are measured by applying X‐ray photoelectron spectroscopy and electron energy loss spectroscopy. From these data an AlN energy level scheme was derived. Depth profiles of AlN on Si are measured mainly by secondary ion mass spectroscopy and photoelectron spectroscopy. They lead to the conclusion that the interfaces are relatively sharp (5 to 10 nm) if the film is deposited at moderate temperatures (<500 °C) and at moderate sputter powers (<500 W).