conventional bulk semiconductors such as GaAs. [6] Meanwhile, the emission wavelengths of lead halide perovskites can be widely tuned from ultraviolet to nearinfrared by controlling the stoichiometry either in solution during the synthesis [7] or postsynthetically with induced coupled plasma etching, [8] making them as ideal materials to fill the green gap between III-Nitrides and III-Phosphides. In the past few years, many types of lead halide perovskites lasers have been developed, e.g., Fabry-Perot lasers in perovskite nanowires, [9] whispering-gallery (WG)mode lasers in perovskite microrods and microplate, [10,11] and random lasers in selfassembled perovskite nanostructures. [12] In 2016, the main laser characteristics such as lasing wavelength, linewidths, and output directionality have been successfully improved by tailoring the cavity boundary shapes, substrates, and spatial positions. [13][14][15] However, the laser thresholds and output intensities are mostly determined by the synthesized crystal quality of lead halide perovskites. The direct enhancements of these parameters have rarely been studied.According to the Purcell effect, [16] spontaneous emission is not an intrinsic property of an emitter and it can be controlled by the surrounding electromagnetic environment. As a result, when optical materials are placed near metallic nanostructures, the total decay rate can be significantly increased owning to the large local density of optical states near the metal surface. [17] In the past decade, for the case of conventional gain materials such as GaN, [18] ZnO, [19][20][21][22] and dye-doped polymers, [23] their photoluminescence intensities and directionalities have been significantly enhanced by patterning the devices with plasmonic nanostructures, e.g., semicontinuous film, [24] metallic nanoparticles, [25] single antenna, [26] antenna array, [27] metallic nanoholes, [28] and so on. Very recently, in order to improve the optical performances of lead halide perovskite devices, a combination of lead halide perovskites and plasmonic nanostructures has proven to be very attractive. However, due to the intrinsic instability of lead halide perovskite to polar solutions, most of the nanofabrication techniques for generating nanoantennas on conventional semiconductors such as electron beam lithography and lift-off are not applicable in lead halide perovskite