Plasmonic enhancement of current-driven whispering gallery polariton device of single microwire based heterojunction via Rh nanocubes deposition

Exciton–polariton light-emitting diode based on a single ZnO superlattice microwire heterojunction with performance enhanced by Rh nanostructures

“…A strong curvature and deviation can be observed from the coupling strength of the emitted photons and excitons, and the Rabi splitting energy was calculated by minimizing the vertical distance between the two energy branches in the dispersion curves. 49,64 The corresponding Rabi splitting energy marked by the double-headed arrow was extracted to be about 275 meV, satisfying the condition of strong exciton–photon coupling. Obviously, the strength of the exciton–photon coupling can be attributed to the superlattice structure of the photonic microcavity and the space constraint of periodic excitons.…”

“…Therefore, the Rh plasmons can directly couple with ZnO/ZnO:Ga excitons. 45,49 Similarly, the PL spectrum shows a multipeak emission feature. Apart from the similar waveguide behavior, the modulated PL properties, including a slight blueshift of the dominant PL wavelengths and a little narrowing of the PL linewidth, were further observed.…”

“…2(h), when varying the wavevector k , anti-crossing behavior can be created and the photon energies E of each of the sharp peaks are separated into an upper branch and lower branch due to the exciton–photon coupling interaction. 49,52,62 The corresponding Rabi splitting energy, which can be calculated from the energy gap between the two exciton–polariton branches of E – k dispersions, was evaluated to be about 283 meV. The very strong exciton–photon coupling strength is attributed to the selective oscillation transmission in the longitudinal direction in the CVD-synthesized superlattice MW.…”

“…The result further proves that cladding with Rh nanostructures can be employed to optimize the EL properties of our constructed single ZnO/ZnO:Ga superlattice MW heterojunction LED light sources. 49,59…”

“…Consequently, the broad EL could be contributed to by the superposition of near band-edge luminescence of the ZnO/ZnO:Ga superlattice MW, an interfacial recombination at the n-ZnO/ZnO:Ga MW/p-GaN interface, and a relatively weak emission in the GaN layer. 42,49,56…”