Plasmonic Photovoltaic Double-Graphene Detector Integrated Into TiN Slot Waveguides

Alaloul, Mohammed; Khurgin, Jacob B.

doi:10.1109/jphot.2021.3122105

Cited by 9 publications

(5 citation statements)

References 60 publications

(76 reference statements)

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“…Alaloul et al theoretically designed a 5 μm-long ultra-high responsivity graphene-based PD using a TiN slot waveguide. 220 In addition to TiN materials, metallic Ti can be used in PDs based on SPP slot waveguides. Xiang et al constructed an MoTe 2 PD operating at the wavelength of 1.6 μm based on the IPE principle, utilizing a Ti–MoTe 2 Schottky junction to achieve a low dark current and exhibiting responsivities of 23 mA W −1 and a linear dynamic range of 0.4 mW–1.6 mW.…”

Section: Dm-based Waveguide-integrated Pdsmentioning

confidence: 99%

On-chip two-dimensional material-based waveguide-integrated photodetectors

He,

Wang,

Peng

et al. 2024

J. Mater. Chem. C

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Section: Dm-based Waveguide-integrated Pdsmentioning

confidence: 99%

On-chip two-dimensional material-based waveguide-integrated photodetectors

He,

Wang,

Peng

et al. 2024

J. Mater. Chem. C

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“…The refractive index data of hBN are available in [16]. In Lumerical, graphene is simulated using the 2D model with a surface optical conductivity (σ) [17,18]:…”

Section: Modeling Parametersmentioning

confidence: 99%

“…The generated sea of hot electrons later cools down in a few picoseconds by phonon-and disorder-assisted scattering [29][30][31][32]. The device switching time is quantified by first considering the electrical conductivity of graphene [17,[33][34][35]:…”

Section: Switching Performancementioning

confidence: 99%

Ultra-efficient DC-gated all-optical graphene switch

Alaloul¹,

As’ham²,

Hattori³

et al. 2022

J. Opt.

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The ultrafast response and broadband absorption of all-optical graphene switches are highly desirable for on-chip photonic computing systems. However, because graphene is an atomically thin material, its absorption of guided optical modes is relatively low, resulting in high saturation thresholds and switching energies for these devices. To boost the absorption of graphene, we present a practical design of an electrically-biased all-optical graphene switch that is integrated into silicon slot waveguides, which strongly confine the optical mode in the slotted region and enhance its interaction with graphene. Moreover, the design incorporates a silicon slab layer and a hafnia dielectric layer to electrically tune the saturation threshold and the switching energy of the device by applying DC voltages of <0.5V. Using this device, a high extinction ratio (ER) of 10.3 dB, a low insertion loss (IL) of <0.7 dB, and an ultra-efficient switching energy of 79 fJ/bit at 0.23V bias are attainable for a 40 μm long switch. The reported performance metrics for this device are highly promising and are expected to serve the needs of next-generation photonic computing systems.

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“…In order to calculate the recovery time of the switch, the electrical conductivity of graphene is first calculated using the following relation [63], [64]:…”

Section: Modulation Performancementioning

confidence: 99%

High-Performance All-Optical Modulator Based on Graphene-hBN Heterostructures

Alaloul,

Khurgin

2022

Preprint

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Graphene has emerged as an ultrafast photonic material for on-chip all-optical modulation. However, its atomic thickness limits its interaction with guided optical modes, which results in a high switching energy per bit or low modulation efficiencies. Nonetheless, it is possible to enhance the interaction of guided light with graphene by nanophotonic means. Herein, we present a practical design of an all-optical modulator that is based on graphene and hexagonal boron nitride (hBN) heterostructures that are hybrid integrated into silicon slot waveguides. Using this device, a high extinction ratio (ER) of 7.3 dB, an ultralow insertion loss (IL) of <0.6 dB, and energy-efficient switching (<0.33 pJ/bit) are attainable for a 20 µm long modulator with double layer graphene. In addition, the device performs ultrafast switching with a recovery time of <600 fs, and could potentially be employed as a high-performance all-optical modulator with an ultra-high bandwidth in the hundreds of GHz. Moreover, the modulation efficiency of the device is further enhanced by stacking additional layers of graphene-hBN heterostructures, while theoretically maintaining an ultrafast response. The proposed device exhibits highly promising performance metrics, which are expected to serve the needs of next-generation photonic computing systems.

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Plasmonic Photovoltaic Double-Graphene Detector Integrated Into TiN Slot Waveguides

Cited by 9 publications

References 60 publications

On-chip two-dimensional material-based waveguide-integrated photodetectors

On-chip two-dimensional material-based waveguide-integrated photodetectors

Ultra-efficient DC-gated all-optical graphene switch

High-Performance All-Optical Modulator Based on Graphene-hBN Heterostructures

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