We investigate the electro-optic properties of black phosphorus (BP) thin films for optical modulation in the mid-infrared frequencies. Our calculation indicates that an applied out-of-plane electric field may lead to red-, blue-, or bidirectional shift in BP's absorption edge. This is due to the interplay between the field-induced quantum-confined Franz-Keldysh effect and the Pauli-blocked Burstein-Moss shift. The relative contribution of the two electro-absorption mechanisms depends on doping range, operating wavelength, and BP film thickness. For proof-of concept, simple modulator configuration with BP overlaid over a silicon nanowire is studied. Simulation result shows that operating BP in the quantum-confined Franz-Keldysh regime can improve maximal attainable absorption and power efficiency compared to its graphene counterpart.Introduction-The mid-infrared (MIR) regime contains the fingerprints of many common molecular vibrations and covers several atmospheric transmission windows, making it important for spectroscopic molecular analysis, sensing, and free-space optical communications [1, 2]. As such, integrated photonic solutions that can operate between λ = 2-10 µm are of great technological importance. In particular, progress has been made in components such as broadband source and frequency comb with on-chip form-factor [3,4], Si 3 N 4 and SiGebased low-loss optical waveguides, and photodetectors utilizing low-bandgap materials [5]. However, the realization of MIR optical modulators, which require material platforms with versatile opto-electronic properties, remain challenging.