Plasmons in icosahedral quasicrystals: An EELS investigation

Grenet, T.; Cheynet, M.C.

doi:10.1007/s100510050088

Cited by 35 publications

(69 citation statements)

References 2 publications

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“…Similar results, in particular the decrease of Γ with temperature and memory of higher temperatures, were recently found in granular aluminium films, too 15,18 .…”

Section: B the Memory Effectsupporting

confidence: 86%

“…A very similar anomalous field effect, accompanied by slow relaxation, was observed in various granular metals such as Au 13 , Al 14,15 , as well as Bi and Pb 16,17 . Furthermore, the aging behavior and the temperature dependence of the memory dip reported in granular Al 18 are very similar to those found in indium-oxide films 19 .…”

Section: Introductionsupporting

confidence: 64%

“…At high temperatures, the percolation approach predicts a decrease of the cusp amplitude like 1/T , which is weaker than what is usually observed in experiments 15,19 . This difference may again originate from our neglect of spatial correlations in δφ i discussed above.…”

Section: The Memory Dipcontrasting

confidence: 55%

“…Monroe et al 5 were the first to observe slow electronic relaxation in the capacitance of ptype doped, partially compensated GaAs. More recently, very slow logarithmic relaxation was observed in the conductivity of various granular metals 15,16,17 , as well as in indium-oxide films 7 . Furthermore, after equilibration under fixed experimental conditions and subsequent moderate excitation during a time t w (e.g., by gate voltage 7 or electric field 9 ), the typical relaxation time of such films is found to scale with t w .…”

Section: A Slow Relaxation and Agingmentioning

confidence: 99%

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Memory effect in electron glasses: Theoretical analysis via a percolation approach

Lebanon

Müller

2005

Phys. Rev. B

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We present a theory for the memory effect in electron glasses. In fast gate voltage sweeps it is manifested as a dip in the conductivity around the equilibration gate voltage. We show that this feature, also known as anomalous field effect, arises from the long-time persistence of correlations in the electronic configuration. We argue that the gate voltage at which the memory dip saturates is related to an instability caused by the injection of a critical number of excess carriers. This saturation threshold naturally increases with temperature. On the other hand, we argue that the gate voltage beyond which memory is erased, is temperature independent. Using standard percolation arguments, we calculate the anomalous field effect as a function of gate voltage, temperature, carrier density and disorder. Our results are consistent with experiments, and in particular, they reproduce the observed scaling of the width of the memory dip with various parameters.

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“…Similar results, in particular the decrease of Γ with temperature and memory of higher temperatures, were recently found in granular aluminium films, too 15,18 .…”

Section: B the Memory Effectsupporting

confidence: 86%

Section: Introductionsupporting

confidence: 64%

Section: The Memory Dipcontrasting

confidence: 55%

Section: A Slow Relaxation and Agingmentioning

confidence: 99%

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Memory effect in electron glasses: Theoretical analysis via a percolation approach

Lebanon

Müller

2005

Phys. Rev. B

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“…We focus on an anomalous electric field effect and on its glassy relaxation subsequent to external disturbances, brief accounts of which were previously given in [1,2]. In this section we first give a short overview of the experimental context of our studies.…”

Section: Introductionmentioning

confidence: 99%

Anomalous electric‐field effect and glassy behaviour in granular aluminium: electron glass?

Grenet¹,

Delahaye²,

Sabra³

et al. 2008

Phys. Status Solidi (c)

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Abstract. We present a study of non-equilibrium phenomena observed in the electrical conductance of insulating granular aluminium thin films. An anomalous field effect and its slow relaxation are studied in some detail. The phenomenology is very similar to the one already observed in indium oxide. The origin of the phenomena is discussed. In granular systems, the present experiments can naturally be interpreted along two different lines. One relies on a slow polarisation in the dielectric surrounding the metallic islands. The other one relies on a purely electronic mechanism: the formation of an electron Coulomb glass in the granular metal. More selective experiments and/or quantitative predictions about the Coulomb glass properties are still needed to definitely distinguish between the two scenarii.

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Slow conductance relaxation in granular aluminium films

Grenet

2003

phys. stat. sol. (c)

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the proceedings editor does not allow on-line preprints (!) link to the paper on the editor site: http://onlinelibrary.wiley.com/doi/10.1002/pssc.200303622/abstractInternational audienceConductance measurements of thin granular aluminium films are reported. They exhibit a symmetrical field effect anomaly and slow relaxation of the conductance after the samples are put out of equilibrium by abruptly changing the temperature or the gate voltage. The results are identical to the ones reported in InOx thin films, suggesting that these phenomena are quite general in disordered insulators. The study of granular systems may help to elucidate the origin of the glassy behaviour

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Plasmons in icosahedral quasicrystals: An EELS investigation

Cited by 35 publications

References 2 publications

Memory effect in electron glasses: Theoretical analysis via a percolation approach

Memory effect in electron glasses: Theoretical analysis via a percolation approach

Anomalous electric‐field effect and glassy behaviour in granular aluminium: electron glass?

Slow conductance relaxation in granular aluminium films

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