2006 IEEE MTT-S International Microwave Symposium Digest 2006
DOI: 10.1109/mwsym.2006.249787
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Plastic Packaged High Linearity Low Noise Amplifier for 12-30GHz Multi-band Telecom Applications

Abstract: The packaged MMIC design and measured performance of a High Linearity and Low Noise Amplifier from 12 to 30GHz are reported in this paper. A mature 0.25,um gate length Low Noise Pseudomorphic HEMT technology has been used with a BCB-based protection allowing easy and high reliability chip integration into plastic packages. A standard plastic QFN SMD package has been successfully used: 25dB typical gain has been measured with less than 2.0 dB noise figure in all the frequency band from 12 to 30GHz and more than… Show more

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“…HEMTs amplifiers with both low noise and high linearity performances are important for microwave receiver applications [1]- [2]. A scalable HEMT device model is thus required to accurately predicate nonlinear signal as well as noise performances.…”
Section: Introductionmentioning
confidence: 99%
“…HEMTs amplifiers with both low noise and high linearity performances are important for microwave receiver applications [1]- [2]. A scalable HEMT device model is thus required to accurately predicate nonlinear signal as well as noise performances.…”
Section: Introductionmentioning
confidence: 99%
“…For modern communications, design of PHEMT amplifiers with both low noise and high linearity performances are critical and challenging [1,2]. It is highly desired to have a comprehensive and accurate large-signal model to predict both noise and linearity for various gate-widths and gatenumbers of devices.…”
Section: Introductionmentioning
confidence: 99%