In this contribution, we demonstrate room temperature growth of highly oriented single phase nanocrystalline films of VO 2 (A) on glass substrates using pulsed laser deposition (PLD) technique under high oxygen pressure and small target-substrate separation. The structural, morphological, optical, electrical and compositional properties of the deposited thin films have been studied by means of X-ray diffraction, atomic force microscopy, spectrophotometry, 04 probe method and X-ray photoelectron spectroscopy, respectively. The plasma under which VO 2 (A) was grown has been analyzed by means of time-and spaceresolved optical emission spectroscopy (OES) and Langmuir probe (LP) techniques. We evidenced a correlation between growth conditions and plasma characteristics. While OES showed that at the deposition distance corresponding to the length of the visible plasma, the plasma species are completely thermalized and characterized by a very low degree of excitation, LP technique indicated a formation of charged clusters within the gas phase. By combining OES and LP data, a quadruple plasma structure has been shown. The growth of under-stoichiometric (comparing to the parent V 2 O 5 target) nanocrystalline VO 2 (A) phase has been attributed to nanoparticles formation in the gas phase under a plasma environment rarefied in oxygen atoms due to the scattering and backscattering effects. This finding opens 2 up the opportunity to grow VO 2 polymorphs at very low temperature by PLD for novel promising new device functionalities.