PM-07 Structure Characterization of Bi-Doped SnSe Thin Films Fabricated by Pulse Laser Deposition

The ultra-high thermoelectric power factor in facile and scalable single-step thermal evaporation fabricated composite SnSe/Bi thin films

“…These improved thermoelectric performances by effectively increasing the carrier density up to 2 orders. 28,46,48,52,[73][74][75] Room temperature Hall measurement gives the carrier concentrations of 1.8 Â 10 18 , 1.87 Â 10 19 , and 9.1 Â 10 19 , respectively, for S1, S2, and S3. It is clear from Hall measurement that B2 orders of magnitude is increased from S1 to S3, upon adding Bi.…”

“…They employed SnSe ink with a binder and achieved a high value of ZT (1.7) at 758 K. Different approaches such as doping, alloying, hetero-structuring, and different growth methods were implemented to achieve the good thermoelectric performance of the SnSe thin film so far. 28,[46][47][48][49][50][51][52][53][54] Recently, a composite of SnSe and AgSbTe 2 with doped Pb showed a very high power factor of 13 mW cm À1 K À2 at 723 K. 55 They have optimized the thermoelectric transport properties, which can be related to simultaneously suppressing lattice and electronic thermal conductivities by doping Pb.…”